Method of manufacturing semiconductor optical devices

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	Method of manufacturing semiconductor optical devices
其他题名	Method of manufacturing semiconductor optical devices
	CHO, SI HYUNG; DAUTREMONT-SMITH, WILLIAM CROSSLEY; HUANG, SUN-YUAN; JOYNER, CHARLES H; LEIBENGUTH, RONALD EUGENE; OUGAZZADEN, ABDALLAH; REYNOLDS, JR., CLAUDE LEWIS
	2003-10-21
专利权人	AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORP.
公开日期	2003-10-21
授权国家	美国
专利类型	授权发明
摘要	The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.
其他摘要	本发明是一种半导体光学器件和制造方法，其中器件包括具有第一折射率的有源层的有源区和具有第二较低折射率的阻挡区。在有源区和阻挡区两者上形成折射率高于阻挡区的半导体层，使得半导体层在未被阻挡区覆盖的区域中更靠近有源层，从而减小其间的差异。有源区的有效折射率和阻挡区的有效折射率。这种装置对于泵浦光放大器特别有用，因为可以在保持单模发射的同时实现更大的功率。
授权日期	2003-10-21
申请日期	2000-12-20
专利号	US6635502
专利状态	授权
申请号	US09/741358
公开（公告）号	US6635502
IPC 分类号	H01S5/00 \| H01S5/227 \| H01S5/343 \| H01S5/22 \| H01S5/20 \| H01L21/00
专利代理人	-
代理机构	FITZGERALD, SEAN P.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42147
专题	半导体激光器专利数据库
作者单位	AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORP.
推荐引用方式 GB/T 7714	CHO, SI HYUNG,DAUTREMONT-SMITH, WILLIAM CROSSLEY,HUANG, SUN-YUAN,et al. Method of manufacturing semiconductor optical devices. US6635502[P]. 2003-10-21.

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