Semiconductor laser device, a semiconductor wafer

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	Semiconductor laser device, a semiconductor wafer
其他题名	Semiconductor laser device, a semiconductor wafer
	KONDO, MASAKI; SASAKI, KAZUAKI; MORIMOTO, TAIJI; MATSUMOTO, MITSUHIRO; HOSOBA, HIROYUKI; MATSUI, SADAYOSHI; YAMAMOTO, SABURO; SUYAMA, TAKAHIRO; KONDO, MASAFUMI
	1991-08-20
专利权人	SHARP KABUSHIKI KAISHA
公开日期	1991-08-20
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.degree.<.vertline..theta..vertline.<4.degree.; a plurality of striped channels formed in a substrate through a current blocking layer in the direction of the other of the [011] and [011] directions; and at least one dummy side groove formed between the striped channels, having a combined cross-sectional area on the plane perpendicular to the other direction greater than that of each of the striped channels.
其他摘要	提供一种半导体激光器件和制造半导体激光器件的方法，该半导体激光器件包括通过基板上的电流阻挡层形成在半导体衬底中的条纹沟道和形成在电流阻挡中的至少两个虚设沟槽条纹通道两侧的层。还提供了为制造具有光波导的光学器件而制备的半导体晶片，以及制造半导体晶片的方法。半导体晶片包括半导体衬底，半导体衬底的表面具有从[100]方向倾斜到角度θ的[011]和[011]方向之一的取向。满足关系0.degree。<。vertline..theta..vertline。<4.degree。;多个条纹通道，在[011]和[011]方向中的另一个方向上通过电流阻挡层形成在基板中;在条纹通道之间形成至少一个虚设侧槽，在垂直于另一个方向的平面上的组合横截面积大于每个条纹通道的横截面积。
授权日期	1991-08-20
申请日期	1990-04-27
专利号	US5042044
专利状态	失效
申请号	US07/513508
公开（公告）号	US5042044
IPC 分类号	H01S5/323 \| H01S5/00 \| H01S5/24 \| H01S5/32 \| H01S3/19
专利代理人	-
代理机构	NIXON & VANDERHYE
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42078
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KONDO, MASAKI,SASAKI, KAZUAKI,MORIMOTO, TAIJI,et al. Semiconductor laser device, a semiconductor wafer. US5042044[P]. 1991-08-20.

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