Process for the fabrication of light-emitting semiconductor diodes

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	Process for the fabrication of light-emitting semiconductor diodes
其他题名	Process for the fabrication of light-emitting semiconductor diodes
	GEORGE, ARTHUR, HENDERSON; GARY, EDMOND, PITTMAN
	1972-12-20
专利权人	TEXAS INSTRUMENTS INCORPORATED
公开日期	1972-12-20
授权国家	英国
专利类型	授权发明
摘要	1300067 Electroluminescence TEXAS INSTRUMENTS Inc 1 Dec 1969 [23 Jan 1969] 58518/69 Heading C4S [Also in Division H1] The invention makes use of the high rate of diffusion of zinc along the interface between an AIIIBV body containing phosphorus and a masking layer of (phosphorus-doped) silicon oxide. A somewhat less high zinc diffusion rate prevails with non-phosphidic AIIIBV compounds which may also be used. In a particular embodiment an n-type gallium arsenophosphide body 11 is provided with an apertured silicon nitride mask 12 and the assembly then coated with a layer 13 of phosphorus-doped silicon oxide which lies on the nitride mask and directly on the semiconductor where the nitride mask is apertured. An annular portion 14 of the oxide is removed contiguous with the edge of the aperture in the nitride and the structure is then heated in an atmosphere containing zinc. The nitride-semiconductor interface does not favour lateral zinc diffusion which however occurs under the oxide so that in the structure shown the deeper part of the pn-junction 16 is outlined by the nitride mask and the shallower less heavily doped part is formed as a result of lateral diffusion under the oxide. Both masking layers are removed and the body recoated with an oxide layer in which an annular aperture is formed so that an evaporated zinc-gold electrode may be provided on the thicker part of the p-type region. (Gold-antimony may be used to contact the n-type body.) The resultant diode emits light of high intensity from the shallow part of the junction through the overlying oxide. A similar embodiment (Figs. 6-10, not shown), utilizes a rectangular slot in the oxide mask to provide a rectangular p-type region of tapered thickness with a deep highly doped portion at one edge at the position of the diffusion slot.
其他摘要	1300067电致发光TEXAS INSTRUMENTS Inc 1969年12月1日[1969年1月23日] 58518/69标题C4S [同样在H1部分]本发明利用了沿着A III 之间界面的高扩散率含有磷的B V 体和（磷掺杂的）氧化硅的掩蔽层。使用非磷酸化的A III B V 化合物的锌扩散速率略低。在一个特定实施例中，n型砷化镓砷体11设置有有孔氮化硅掩模12，然后该组件涂覆有磷掺杂氧化硅层13，该层13位于氮化物掩模上并且直接在氮化物半导体上面具是开孔的。氧化物的环形部分14与氮化物中的孔的边缘相邻地被移除，然后该结构在含锌的气氛中被加热。该氮化物 - 半导体界面不利于横向锌扩散，其然而发生在氧化物下面，使得在所示结构中，pn结16的较深部分由氮化物掩模勾画，并且由于以下形成较浅的较少重掺杂部分。氧化物下的横向扩散。去除两个掩模层并用氧化物层重新涂覆，其中形成环形孔，使得可以在p型区域的较厚部分上提供蒸发的锌 - 金电极。（金 - 锑可用于接触n型体。）所得二极管通过上覆氧化物从结的浅部分发射高强度的光。类似的实施例（图6-10，未示出）利用氧化物掩模中的矩形槽提供锥形厚度的矩形p型区域，在扩散位置的一个边缘处具有深度高掺杂部分。插槽。
授权日期	1972-12-20
申请日期	1969-12-01
专利号	GB1300067A
专利状态	失效
申请号	GB1969058518
公开（公告）号	GB1300067A
IPC 分类号	H01S5/30 \| H01L \| H01L23/29 \| H01L21/00 \| H01S5/00 \| H01L21/22 \| H01L27/00 \| H01S5/32 \| H01L33/00 \| H01L23/28
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/42048
专题	半导体激光器专利数据库
作者单位	TEXAS INSTRUMENTS INCORPORATED
推荐引用方式 GB/T 7714	GEORGE, ARTHUR, HENDERSON,GARY, EDMOND, PITTMAN. Process for the fabrication of light-emitting semiconductor diodes. GB1300067A[P]. 1972-12-20.

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