Method of fabricating a semiconductor laser device

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	Method of fabricating a semiconductor laser device
其他题名	Method of fabricating a semiconductor laser device
	HOSOBA, HIROYUKI; SEKI, AKINORI; HATA, TOSHIO; KONDOU, MASAFUMI; SUYAMA, TAKAHIRO; MATSUI, SADAYOSHI
	1994-01-12
专利权人	SHARP KABUSHIKI KAISHA
公开日期	1994-01-12
授权国家	欧洲专利局
专利类型	授权发明
摘要	A semiconductor laser device is provided which includes a semiconductor substrate (1) and a multi-layered structure disposed on the substrate, the multi-layered structure containing an AlxGa1-xAs (0 y) active layer (3) for laser oscillation formed on the first cladding layer, an AlxGa1-xAs (0 y) active layer (3) for laser oscillation, an AlGaAs (0 < x < 1) second cladding layer (22), a GaAs buffer layer (4), an AluGa1-uAs (0 < u < 1) etching stopper layer (5), an AlzGa1-zAs (0 < z < 1, z < u) current blocking layer (61), and a GaAs protective layer; etching the protective layer and the current blocking layer to form a striped groove as a current injection path; removing the exposed portion of the etching stopper layer (5) on the bottom of the striped groove; removing the portion of the buffer layer (4) on the bottom of the striped groove and at least one part of the protective layer by a melt-back technique; and growing an AlxGa1-xAs (0 < x < 1) third cladding layer (23) so as to bury the striped groove therein and growing a GaAs contact layer (7) on the third cladding layer.
其他摘要	提供一种半导体激光器件，包括半导体衬底（1）和设置在衬底上的多层结构，该多层结构包含在其上形成的Al x Ga 1-x As（0 y）有源层（3），AlxGa1-xAs（0 y）用于激光振荡的有源层（3），AlGaAs（0
授权日期	1994-01-12
申请日期	1991-04-12
专利号	EP0452146B1
专利状态	失效
申请号	EP1991303258
公开（公告）号	EP0452146B1
IPC 分类号	H01S5/00 \| H01S5/20 \| H01S5/223 \| H01S5/323 \| H01S3/19 \| H01L33/00
专利代理人	-
代理机构	WHITE, MARTIN DAVID
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41957
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	HOSOBA, HIROYUKI,SEKI, AKINORI,HATA, TOSHIO,et al. Method of fabricating a semiconductor laser device. EP0452146B1[P]. 1994-01-12.