Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor

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	Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor
其他题名	Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor
	JOHNSON, FREDERICK G.; KOLEY, BIKASH; WASICZKO, LINDA M.
	2002-06-18
专利权人	NATIONAL SECURITY AGENCY
公开日期	2002-06-18
授权国家	美国
专利类型	授权发明
摘要	A ridge laser that includes a Group III-V semiconductor material substrate; a first selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a multiple quantum well active region; a second selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a Group III-V semiconductor material cap layer; and a contact material. Each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. In the preferred embodiment, the substrate is InP of any type; each selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material is InAs/AlAs, where each at least one superlattice of InAs/AlAs includes at least two monolayers of InAs and at least two monolayers of AlAs; the multiple quantum well active region is InGaAsP lattice matched to the InP substrate, the Group III-V semiconductor material cap layer is InP, and the contact material is gold.
其他摘要	一种脊形激光器，包括III-V族半导体材料衬底;第一选择性氧化至少一种III-V族半导体材料的应变补偿超晶格;多量子阱活性区域;第二选择性氧化至少一种III-V族半导体材料的应变补偿超晶格; III-V族半导体材料覆盖层;和联系材料。每个至少一个应变补偿超晶格包括至少两个III-V族半导体材料单层和至少两个含铝III-V族半导体材料单层。在优选的实施方案中，基材是任何类型的InP;每个选择性氧化的至少一个III-V族半导体材料的应变补偿超晶格是InAs / AlAs，其中每个至少一个InAs / AlAs超晶格包括至少两个InAs单层和至少两个单层AlAs;多量子阱有源区是与InP衬底匹配的InGaAsP晶格，III-V族半导体材料覆盖层是InP，接触材料是金。
授权日期	2002-06-18
申请日期	2000-05-02
专利号	US6407407
专利状态	授权
申请号	US09/563314
公开（公告）号	US6407407
IPC 分类号	H01S5/34 \| H01S5/00 \| H01S5/32 \| H01S5/22 \| H01S5/183 \| H01L29/06
专利代理人	-
代理机构	MORELLI, ROBERT D.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41893
专题	半导体激光器专利数据库
作者单位	NATIONAL SECURITY AGENCY
推荐引用方式 GB/T 7714	JOHNSON, FREDERICK G.,KOLEY, BIKASH,WASICZKO, LINDA M.. Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor. US6407407[P]. 2002-06-18.

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