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Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration
其他题名Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration
AMERSFOORT, MARTIN; ZAH, CHUNG-EN
1998-09-08
专利权人REMBRANDT COMMUNICATIONS, LP
公开日期1998-09-08
授权国家美国
专利类型授权发明
摘要An opto-electronic integrated circuit including an active ridge waveguide (60), for example, a semiconductor laser diode, and a passive buried heterostructure semiconductor waveguide (64). The two types of waveguides are chosen for their respective tasks so as to minimize the lasing wavelength dependencies arising from fabricational variations and to simultaneously reduce the allowable bending radius, thus reducing the chip size. The two waveguides are coupled by a transition structure (62) including a laterally undefined slab waveguide. A fabricational method is described that self-aligns the ridge and buried heterostructure waveguides so that the transition loss is negligible. The method can be integrated with the fabrication of a window facet (118', 118'') between an end of the ridge waveguide and the chip edge, which prevents unintended back reflections from the chip edge.
其他摘要一种光电集成电路,包括有源脊形波导(60),例如半导体激光二极管和无源掩埋异质结构半导体波导(64)。选择两种类型的波导用于它们各自的任务,以便最小化由制造变化引起的激光波长依赖性并同时减小允许的弯曲半径,从而减小芯片尺寸。两个波导通过包括横向未定义的平板波导的过渡结构(62)耦合。描述了一种制造方法,其使脊和埋入的异质结构波导自对准,使得过渡损耗可以忽略不计。该方法可以与脊形波导的一端和芯片边缘之间的窗面(118',118“)的制造集成,这防止了来自芯片边缘的无意的背反射。
授权日期1998-09-08
申请日期1996-06-17
专利号US5805755
专利状态失效
申请号US08/664599
公开(公告)号US5805755
IPC 分类号G02B6/12 | H01S5/00 | H01S5/026 | H01S5/40 | H01S5/10 | H01S5/22 | G02B6/10
专利代理人-
代理机构GUENZER, CHARLES S.
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/41860
专题半导体激光器专利数据库
作者单位REMBRANDT COMMUNICATIONS, LP
推荐引用方式
GB/T 7714
AMERSFOORT, MARTIN,ZAH, CHUNG-EN. Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration. US5805755[P]. 1998-09-08.
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