Lichtemittierende Halbleitervorrichtung und Übergitterstruktur

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	Lichtemittierende Halbleitervorrichtung und Übergitterstruktur
其他题名	Lichtemittierende Halbleitervorrichtung und Übergitterstruktur
	IGA KENICHI INTELLECTUAL PROPE,JP; KOYAMA FUMIO INTELLECTUAL PROP,JP; TAKAGI TAKESHI INTELLECTUAL PR,JP
	1997-05-07
专利权人	OMRON TATEISI ELECTRONICS CO
公开日期	1997-05-07
授权国家	德国
专利类型	授权发明
摘要	A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer.
其他摘要	半导体发光元件在其有源层的两侧具有包层;它具有多量子势垒层，该多量子势垒层在至少一个包层的至少一部分上与有源层接触。该多量子势垒层由超晶格势垒层和超晶格阱层的交替叠层形成。阱层的能隙小于有源层的能隙，多量子势垒层的量子化能隙大于有源层的能隙。用于限制电子和空穴的半导体器件的超晶格结构由有源层和设置在该有源层的至少一侧上的包层形成。多量子势垒层在包层的至少一部分上与有源层接触。该多量子势垒层由超晶格势垒层和超晶格阱层的交替叠层形成。阱层的能隙小于有源层的能隙，多量子势垒层的量子化能隙大于有源层的能隙。
授权日期	1997-05-07
申请日期	1992-02-28
专利号	DE69213787T2
专利状态	失效
申请号	DE69213787
公开（公告）号	DE69213787T2
IPC 分类号	H01L21/20 \| B82Y10/00 \| B82Y20/00 \| B82Y40/00 \| H01S5/00 \| H01S5/20 \| H01S5/343 \| H01L33/00 \| H01L29/15 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41827
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRONICS CO
推荐引用方式 GB/T 7714	IGA KENICHI INTELLECTUAL PROPE,JP,KOYAMA FUMIO INTELLECTUAL PROP,JP,TAKAGI TAKESHI INTELLECTUAL PR,JP. Lichtemittierende Halbleitervorrichtung und Übergitterstruktur. DE69213787T2[P]. 1997-05-07.

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