Distributed feedback semiconductor laser for outputting beam of single wavelength

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	Distributed feedback semiconductor laser for outputting beam of single wavelength
其他题名	Distributed feedback semiconductor laser for outputting beam of single wavelength
	MORI, HIROSHI; KIKUGAWA, TOMOYUKI; TAKAHASHI, YOSHIO; FUJITA, MOTOAKI
	2006-06-20
专利权人	ANRITSU CORPORATION
公开日期	2006-06-20
授权国家	美国
专利类型	授权发明
摘要	First and second diffraction grating layers are provided above a semiconductor substrate, and are spaced from each other in an output direction of a beam with a flat connecting layer sandwiched therebetween. An active layer is disposed above or below the first and second diffraction grating layers and the connecting layer. A cladding layer is disposed above the active layer or above the first and second diffraction grating layers and the connecting layer. A diffraction grating including the first and second diffraction grating layers has a plurality of slits penetrating from an upper surface to a lower surface that are perpendicular to the output direction of the beam. The connecting layer is formed from two layers grown epitaxially in a direction perpendicular to the output direction of the beam. One of the two layers is formed of the same material as the first and second diffraction grating layers.
其他摘要	第一和第二衍射光栅层设置在半导体衬底上方，并且在光束的输出方向上彼此隔开，其间夹有平坦的连接层。有源层设置在第一和第二衍射光栅层和连接层的上方或下方。包层设置在有源层上方或第一和第二衍射光栅层和连接层上方。包括第一和第二衍射光栅层的衍射光栅具有多个从上表面穿透到下表面的狭缝，这些狭缝垂直于光束的输出方向。连接层由在垂直于光束输出方向的方向上外延生长的两层形成。两层中的一层由与第一和第二衍射光栅层相同的材料形成。
授权日期	2006-06-20
申请日期	2003-06-13
专利号	US7065123
专利状态	失效
申请号	US10/461771
公开（公告）号	US7065123
IPC 分类号	H01S3/08 \| H01S5/00 \| H01S5/12
专利代理人	-
代理机构	FRISHAUF,HOLTZ,GOODMAN & CHICK,P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41727
专题	半导体激光器专利数据库
作者单位	ANRITSU CORPORATION
推荐引用方式 GB/T 7714	MORI, HIROSHI,KIKUGAWA, TOMOYUKI,TAKAHASHI, YOSHIO,et al. Distributed feedback semiconductor laser for outputting beam of single wavelength. US7065123[P]. 2006-06-20.

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