Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same

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	Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
其他题名	Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
	LIM, SUI F.; CHANG-HASNAIN, CONNIE J.
	1998-05-26
专利权人	CALIFORNIA, UNIVERSITY OF, THE, REGENTS OF, THE
公开日期	1998-05-26
授权国家	美国
专利类型	授权发明
摘要	A vertical-cavity surface emitting laser is constructed with an intracavity quantum well photodetector. The quantum well photodetector is placed at an optical intensity peak at the Fabry-Perot wavelength. The device may include a current confinement layer in the form of an oxidation layer, an air gap, or proton implantation. The device may be formed with a semi-insulating substrate, a p+ doped substrate, or an n+ doped substrate. Embodiments of the invention include an air bridge contact, a ridge waveguide structure, and buried heterostructure layers.
其他摘要	垂直腔表面发射激光器由腔内量子阱光电探测器构成。量子阱光电探测器放置在法布里 - 珀罗波长处的光强度峰值处。该器件可以包括氧化层，气隙或质子注入形式的电流限制层。该器件可以形成有半绝缘衬底，p +掺杂衬底或n +掺杂衬底。本发明的实施例包括空气桥接触，脊形波导结构和掩埋异质结构层。
授权日期	1998-05-26
申请日期	1996-10-16
专利号	US5757837
专利状态	失效
申请号	US08/731527
公开（公告）号	US5757837
IPC 分类号	H01S5/026 \| H01S5/00 \| G02F3/00 \| G02F3/02 \| H01S5/042 \| H01S5/065 \| H01S5/06 \| H01S5/183 \| H01S5/20 \| H01S3/19
专利代理人	-
代理机构	FLEHR HOHBACH TEST ALBRITTON & HERBERT LLP GALLIANI, WILLIAM S.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41722
专题	半导体激光器专利数据库
作者单位	CALIFORNIA, UNIVERSITY OF, THE, REGENTS OF, THE
推荐引用方式 GB/T 7714	LIM, SUI F.,CHANG-HASNAIN, CONNIE J.. Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same. US5757837[P]. 1998-05-26.

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