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Optical hybrid integrated device and method of making the same
其他题名Optical hybrid integrated device and method of making the same
UKECHI, MITSUO; MIYASHITA, TAKUYA
2001-11-27
专利权人JAPAN AVIATION ELECTRONICS INDUSTRY LIMITED
公开日期2001-11-27
授权国家美国
专利类型授权发明
摘要The surface area of a rectangular semiconductor substrate (10), which is used a reference plane, is composed of three regions arranged side by side in its lengthwise direction. A first one of the regions has a concavity (13) formed leaving opposite marginal portions of the region as banks (14a,14b), aid solder-coated pads (17) and alignment marks (18) are formed by metal thin films on the top surfaces of the banks. In a second region an electrode (16) is formed adjacent the first region and a semiconductor optical element (PD4) is mounted on the electrode with an active layer (31) of the former facing downward. An under-clad layer (211), acore (22), a height adjustment layer (26) and an over-clad layer (212), which constitute an optical waveguide, are formed over the surface of a second substrate, and the over-clad layer overlying both marginal portions of the second substrate is removed to expose the height adjustment layer to form terraces (20a, 20b) corresponding to the banks. Solder-coated pads (23) and alignment marks (24) are formed by metal films on the terraces, and the solder-coated pads (17) and (23) are soldered to each other with the banks and the terraces positioned using the alignment marks (18) and (24). The thickness of the height adjustment layer (26) is predetermined so that the core and the semiconductor active layer (31) lie at the same vertical position relative to the reference plane.
其他摘要用作参考平面的矩形半导体衬底(10)的表面积由在其长度方向上并排布置的三个区域组成。第一个区域具有形成的凹面(13),留下该区域的相对边缘部分作为堤(14a,14b),辅助焊料涂覆的焊盘(17)和对准标记(18)由金属薄膜形成在银行的顶部表面。在第二区域中,电极(16)形成在第一区域附近,半导体光学元件(PD4)安装在电极上,前者的有源层(31)面向下。下包层(211),孔(22),高度调节层(26)和外包层构成光波导的(212)形成在第二基板的表面上,并且去除覆盖第二基板的两个边缘部分的外包层以暴露高度调节层以形成平台(20a,20b)对应银行。焊料涂层焊盘(23)和对准标记(24)由台面上的金属膜形成,并且焊料涂覆焊盘(17)和(23)彼此焊接,其中堤和梯台使用对准定位标记(18)和(24)。高度调节层(26)的厚度是预定的,使得芯和半导体有源层(31)位于相对于参考的相同垂直位置平面。
授权日期2001-11-27
申请日期1999-09-23
专利号US6324314
专利状态失效
申请号US09/401327
公开(公告)号US6324314
IPC 分类号G02B6/42 | H01S5/00 | H01S5/02 | G02B6/30 | G02B6/122 | G02B6/13 | G02B6/12
专利代理人-
代理机构CONNOLLY BOVE LODGE & HUTZ
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/41696
专题半导体激光器专利数据库
作者单位JAPAN AVIATION ELECTRONICS INDUSTRY LIMITED
推荐引用方式
GB/T 7714
UKECHI, MITSUO,MIYASHITA, TAKUYA. Optical hybrid integrated device and method of making the same. US6324314[P]. 2001-11-27.
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