Formation of laser mirror facets and integration of optoelectronics

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	Formation of laser mirror facets and integration of optoelectronics
其他题名	Formation of laser mirror facets and integration of optoelectronics
	COSTRINI, GREGORY; JAMBOTKAR, CHAKRAPANI G.
	1990-06-12
专利权人	INTERNATIONAL BUSINESS MACHINES CORPORATION, A CORP. OF NEW YORK
公开日期	1990-06-12
授权国家	美国
专利类型	授权发明
摘要	A planar process for fabricating an optoelectronic integrated circuit device is described. The process includes the in situ formation of laser diode mirror facets comprising the steps of providing a semi-insulating gallium arsenide substrate (2) having thereon layers of n-doped gallium arsenide (4), n-doped aluminum gallium arsenide (6), and undoped gallium arsenide (8); patterning and etching the undoped gallium arsenide layer (8) into a mandrel (9) having substantially vertical walls (44); establishing insulator sidewalls (14) on the vertical walls (44); removing the mandrel (9), thereby exposing the inner walls (45) of the insulator sidewalls (14) and leaving the insulator sidewalls (14) self-standing; removing the aluminum gallium arsenide (6) using the insulator sidewall (14) as a mask; and forming a laser diode within the region between the insulator sidewalls (14) and creating the mirror facets (13) with the inner walls (45) of the insulator sidewalls (14). Mirror facets (13) formed in accordance with this process are substantially free of contaminants. The process is suitable for high level of monolithic integration, including the formation of other optical devices, such as waveguides, driver circuits, logic and other electronic circuits.
其他摘要	描述了一种用于制造光电集成电路器件的平面工艺。该方法包括原位形成激光二极管镜面，包括提供半绝缘的砷化镓衬底（2）的步骤，其上具有n掺杂的砷化镓（4），n掺杂的砷化铝镓（6）层，和未掺杂的砷化镓（8）;将未掺杂的砷化镓层（8）图案化并蚀刻到具有基本垂直的壁（44）的心轴（9）中;在垂直壁（44）上建立绝缘体侧壁（14）;移除心轴（9），从而暴露绝缘体侧壁（14）的内壁（45）并使绝缘体侧壁（14）保持自立;使用绝缘体侧壁（14）作为掩模去除砷化铝镓（6）;在绝缘体侧壁（14）之间的区域内形成激光二极管，并与绝缘体侧壁（14）的内壁（45）形成镜面（13）。根据该方法形成的镜面（13）基本上没有污染物。该工艺适用于高水平的单片集成，包括形成其他光学器件，例如波导，驱动器电路，逻辑和其他电子电路。
授权日期	1990-06-12
申请日期	1989-04-19
专利号	US4933302
专利状态	失效
申请号	US07/340195
公开（公告）号	US4933302
IPC 分类号	G02B6/124 \| H01S5/00 \| H01S5/026 \| H01S5/028 \| H01S5/02 \| H01S5/227 \| H01L27/15 \| H01L21/20 \| H01L21/205
专利代理人	-
代理机构	YEE, YEN S. BOLES, DONALD M.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41652
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION, A CORP. OF NEW YORK
推荐引用方式 GB/T 7714	COSTRINI, GREGORY,JAMBOTKAR, CHAKRAPANI G.. Formation of laser mirror facets and integration of optoelectronics. US4933302[P]. 1990-06-12.

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