Method and structure for eliminating polarization instability in laterally-oxidized VCSELs

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	Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
其他题名	Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
	CHUA, CHRISTOPHER L.; THORNTON, ROBERT L.; TREAT, DAVID W.
	2007-01-09
专利权人	XEROX CORPORATION
公开日期	2007-01-09
授权国家	美国
专利类型	授权发明
摘要	The polarization instability inherent in laterally-oxidized VCSELs may be mitigated by employing an appropriately-shaped device aperture, a misoriented substrate, one or more cavities or employing the shaped device aperture together with a misoriented substrate and/or cavities. The laterally-oxidized VCSELs are able to operate in a single polarization mode throughout the entire light output power versus intensity curve. Combining the use of misoriented substrates with a device design that has an asymmetric aperture that reinforces the polarization mode favored by the substrate further improves polarization selectivity. Other device designs, however, can also be combined with substrate misorientation to strengthen polarization selectivity.
其他摘要	通过采用适当形状的器件孔，错误定向的衬底，一个或多个腔或者将成形器件孔与错误定向的衬底和/或腔一起使用，可以减轻横向氧化的VCSEL中固有的极化不稳定性。横向氧化的VCSEL能够在整个光输出功率与强度曲线之间以单偏振模式操作。将错误定向的基板与具有不对称孔径的装置设计的使用相结合，该装置设计增强了基板所偏好的偏振模式，进一步改善了偏振选择性。然而，其他器件设计也可以与衬底取向差相结合以增强极化选择性。
授权日期	2007-01-09
申请日期	2001-08-20
专利号	US7160749
专利状态	授权
申请号	US09/933960
公开（公告）号	US7160749
IPC 分类号	H01L21/00 \| H01S5/00 \| H01S5/183 \| H01S5/20 \| H01S5/42
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/41313
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	CHUA, CHRISTOPHER L.,THORNTON, ROBERT L.,TREAT, DAVID W.. Method and structure for eliminating polarization instability in laterally-oxidized VCSELs. US7160749[P]. 2007-01-09.

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