Xi'an Institute of Optics and Precision Mechanics,CAS
Structure of VCSEL and method for manufacturing the same | |
其他题名 | Structure of VCSEL and method for manufacturing the same |
LIN, BING-CHENG; CHEN, CHIH CHENG; TSENG, HUNG-WEI | |
2018-03-27 | |
专利权人 | TRUELIGHT CORPORATION |
公开日期 | 2018-03-27 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light. |
其他摘要 | 垂直腔面发射激光器(VCSEL)具有三沟槽结构。通过在VCSEL的输出窗周围的台面内形成第一沟槽,总体电容减小,并且用于氧化层的氧化工艺所用的时间缩短。通过在台面的外围以台阶状凹面方式形成第二沟槽和第三沟槽,台面变成具有双台面层的台阶状结构。使得可以获得更大的散热面积以降低热效应,同时也可以避免金属层的金属间隙缺陷。植入层围绕输出窗口的周边形成,用于控制光学模式并限制电流路径。另外,在输出窗口上形成输出层,用于控制输出光。 |
授权日期 | 2018-03-27 |
申请日期 | 2017-06-15 |
专利号 | US9929536 |
专利状态 | 授权 |
申请号 | US15/624489 |
公开(公告)号 | US9929536 |
IPC 分类号 | H01S5/183 | H01S5/187 | H01S5/22 | H01S5/042 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/40589 |
专题 | 半导体激光器专利数据库 |
作者单位 | TRUELIGHT CORPORATION |
推荐引用方式 GB/T 7714 | LIN, BING-CHENG,CHEN, CHIH CHENG,TSENG, HUNG-WEI. Structure of VCSEL and method for manufacturing the same. US9929536[P]. 2018-03-27. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US9929536.PDF(1122KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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