Xi'an Institute of Optics and Precision Mechanics,CAS
Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices | |
其他题名 | Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices |
TSONG, IGNATIUS S. T.; SMITH, DAVID J.; TORRES, VICTOR M.; EDWARDS, JR., JOHN L.; DOAK, R. BRUCE | |
2001-10-23 | |
专利权人 | ARIZONA BOARD OF REGENTS ACTING ON BEHALF OF ARIZONA STATE UNIVERSITY |
公开日期 | 2001-10-23 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | In semiconductor devices such as laser diodes (LD) and light emitting diodes (LED) based on gallium nitride thin films, low defect density is desired in the gallium nitride film. In the fabrication of such devices on a silicon carbide substrate surface, the gallium nitride film is formed on the silicon carbide substrate after the substrate surface is etched using hydrogen at an elevated temperature. In another embodiment, an aluminum nitride film is formed as a buffer layer between the gallium nitride film and the silicon carbide substrate, and, prior to aluminum nitride formation, the substrate surface is etched using hydrogen at an elevated temperature. |
其他摘要 | 在诸如基于氮化镓薄膜的激光二极管(LD)和发光二极管(LED)的半导体器件中,在氮化镓膜中需要低缺陷密度。在碳化硅衬底表面上制造这种器件时,在使用高温氢气蚀刻衬底表面之后,在碳化硅衬底上形成氮化镓膜。在另一个实施例中,形成氮化铝膜作为氮化镓膜和碳化硅衬底之间的缓冲层,并且在形成氮化铝之前,使用氢在高温下蚀刻衬底表面。 |
授权日期 | 2001-10-23 |
申请日期 | 1999-10-08 |
专利号 | US6306675 |
专利状态 | 失效 |
申请号 | US09/414953 |
公开(公告)号 | US6306675 |
IPC 分类号 | H01L21/02 | H01L21/20 | H01L33/00 | H01L21/00 |
专利代理人 | - |
代理机构 | BAKER BOTTS L.L.P. |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/40140 |
专题 | 半导体激光器专利数据库 |
作者单位 | ARIZONA BOARD OF REGENTS ACTING ON BEHALF OF ARIZONA STATE UNIVERSITY |
推荐引用方式 GB/T 7714 | TSONG, IGNATIUS S. T.,SMITH, DAVID J.,TORRES, VICTOR M.,et al. Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices. US6306675[P]. 2001-10-23. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US6306675.PDF(177KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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