Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device

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	Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device
其他题名	Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device
	YONEMURA, TAKUMI; KYONO, TAKASHI; ENYA, YOHEI
	2014-10-28
专利权人	SUMITOMO ELECTRIC INDUSTRIES, LTD.
公开日期	2014-10-28
授权国家	美国
专利类型	授权发明
摘要	A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a p-type dopant providing an acceptor level, and the p-type cladding layer contains an n-type impurity providing a donor level. An active layer is disposed between the n-type cladding layer and the p-type cladding layer. The concentration of the p-type dopant is greater than that of the n-type impurity. The difference (E(BAND)−E(DAP)) between the energy E(BAND) of a band-edge emission peak value in the photoluminescence spectrum of the p-type cladding layer and the energy E(DAP) of a donor-acceptor pair emission peak value in the photoluminescence spectrum is not more than 0.42 electron volts.
其他摘要	III族氮化物半导体发光器件包括在基板的主表面上的n型包覆层和p型包覆层，其c轴相对于基板的主表面的法线轴倾斜。 p型包覆层掺杂有提供受主能级的p型掺杂剂，并且p型包覆层包含提供施主能级的n型杂质。有源层设置在n型包覆层和p型包覆层之间。 p型掺杂剂的浓度大于n型杂质的浓度。 p型包层的光致发光光谱中的带边发射峰值的能量E（BAND）与供体的能量E（DAP）之间的差值（E（BAND）-E（DAP）） - 光致发光光谱中的受体对发射峰值不大于0.42电子伏特。
授权日期	2014-10-28
申请日期	2012-04-23
专利号	US8872156
专利状态	授权
申请号	US13/453718
公开（公告）号	US8872156
IPC 分类号	H01S5/32 \| H01L29/20 \| H01L21/02 \| H01S5/20 \| H01L31/352 \| H01L33/16 \| H01S5/30 \| H01S5/343 \| H01L29/78 \| H01L33/32 \| H01L29/16 \| H01S5/042 \| H01L31/0352 \| H01L29/872 \| H01S5/00
专利代理人	SARTORI, MICHAEL A. \| RIGGS, F. BROCK
代理机构	VENABLE LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/39745
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC INDUSTRIES, LTD.
推荐引用方式 GB/T 7714	YONEMURA, TAKUMI,KYONO, TAKASHI,ENYA, YOHEI. Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device. US8872156[P]. 2014-10-28.

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