Xi'an Institute of Optics and Precision Mechanics,CAS
Radiation emitter component | |
其他题名 | Radiation emitter component |
BOGNER, GEORG; BRUNNER, HERBERT; HAAS, HEINZ; LUFT, JOHANN; NIRSCHL, ERNST; SPAETH, WERNER; STATH, NORBERT; TEICH, WOLFGANG | |
1999-12-07 | |
专利权人 | OSRAM GMBH |
公开日期 | 1999-12-07 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode. |
其他摘要 | 辐射发射器部件,特别是具有传统发光二极管外壳的红外发射器部件,包括两个电极连接,其中一个具有良好形状的反射器。壳体具有光学透明的不导电的封装材料。半导体激光器芯片固定在发光二极管壳体的良好形状的反射器中。半导体激光器芯片具有量子阱结构,特别是具有应变层结构的量子阱结构,例如具有层序列GaAlAs-InGaAs-GaAlAs的MOVPE外延层。漫射材料可以插入发光二极管外壳的光学透明的非导电材料中。关于类型和浓度构造或插入扩散器材料,使得与封装在发光二极管外壳中的半导体激光器芯片相关联,产生辐射特性曲线或有效发射表面的增加,即与传统的红外发光二极管相当。 |
授权日期 | 1999-12-07 |
申请日期 | 1998-01-20 |
专利号 | US5999552 |
专利状态 | 失效 |
申请号 | US09/009606 |
公开(公告)号 | US5999552 |
IPC 分类号 | H01S5/022 | H01S5/00 | H01L33/00 | H01S3/00 | H01L33/56 | H01S3/18 |
专利代理人 | - |
代理机构 | LERNER, HERBERT L. GREENBERG, LAURENCE A. |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/39264 |
专题 | 半导体激光器专利数据库 |
作者单位 | OSRAM GMBH |
推荐引用方式 GB/T 7714 | BOGNER, GEORG,BRUNNER, HERBERT,HAAS, HEINZ,et al. Radiation emitter component. US5999552[P]. 1999-12-07. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US5999552.PDF(86KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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