Radiation emitter component

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	Radiation emitter component
其他题名	Radiation emitter component
	BOGNER, GEORG; BRUNNER, HERBERT; HAAS, HEINZ; LUFT, JOHANN; NIRSCHL, ERNST; SPAETH, WERNER; STATH, NORBERT; TEICH, WOLFGANG
	1999-12-07
专利权人	OSRAM GMBH
公开日期	1999-12-07
授权国家	美国
专利类型	授权发明
摘要	A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.
其他摘要	辐射发射器部件，特别是具有传统发光二极管外壳的红外发射器部件，包括两个电极连接，其中一个具有良好形状的反射器。壳体具有光学透明的不导电的封装材料。半导体激光器芯片固定在发光二极管壳体的良好形状的反射器中。半导体激光器芯片具有量子阱结构，特别是具有应变层结构的量子阱结构，例如具有层序列GaAlAs-InGaAs-GaAlAs的MOVPE外延层。漫射材料可以插入发光二极管外壳的光学透明的非导电材料中。关于类型和浓度构造或插入扩散器材料，使得与封装在发光二极管外壳中的半导体激光器芯片相关联，产生辐射特性曲线或有效发射表面的增加，即与传统的红外发光二极管相当。
授权日期	1999-12-07
申请日期	1998-01-20
专利号	US5999552
专利状态	失效
申请号	US09/009606
公开（公告）号	US5999552
IPC 分类号	H01S5/022 \| H01S5/00 \| H01L33/00 \| H01S3/00 \| H01L33/56 \| H01S3/18
专利代理人	-
代理机构	LERNER, HERBERT L. GREENBERG, LAURENCE A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/39264
专题	半导体激光器专利数据库
作者单位	OSRAM GMBH
推荐引用方式 GB/T 7714	BOGNER, GEORG,BRUNNER, HERBERT,HAAS, HEINZ,et al. Radiation emitter component. US5999552[P]. 1999-12-07.

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