Method of producing a semiconductor laser

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	Method of producing a semiconductor laser
其他题名	Method of producing a semiconductor laser
	SATO, KIYOTAKA; TOGURA, KENJI
	1994-11-15
专利权人	CLARION CO. LTD.
公开日期	1994-11-15
授权国家	美国
专利类型	授权发明
摘要	A semiconductor substrate is coated with an insulation mask. A window is cut in the mask using photolithography leaving stress risers at locations defining the length of a laser cavity. A plurality of layers of semiconductor film are selectively grown over the exposed substrate to form a pin diode and necessary impurities are injected. An intrinsic layer of the film forms a laser excitation layer and emits laser beams in response to excitation. Following heat treatment, the device is cooled rapidly, causing stress in the areas where the stress risers from the mask join the semiconductor film. By the time the device reaches room temperature, the semiconductor film is split and separated by cleavage planes. Alignment of the semiconductor laser device output beams is produced by anisotropic etching of the cleavage planes to form 45 DEG mirror planes. Conventional photolithographic techniques permit formation of the laser resonator with an accuracy on the order of submicrons.
其他摘要	半导体衬底涂有绝缘掩模。使用光刻法在掩模中切割窗口，在限定激光腔长度的位置处留下应力上升。在暴露的衬底上选择性地生长多层半导体膜以形成pin二极管，并注入必要的杂质。薄膜的本征层形成激光激发层并响应激发发射激光束。在热处理之后，器件迅速冷却，在来自掩模的应力上升的区域中引起应力，从而加入半导体膜。当器件达到室温时，半导体膜被分裂平面分开并分开。半导体激光器件输出光束的对准通过解理面的各向异性蚀刻产生，以形成45°镜面。传统的光刻技术允许以亚微米级的精度形成激光谐振器。
授权日期	1994-11-15
申请日期	1993-01-07
专利号	US5365537
专利状态	失效
申请号	US08/001462
公开（公告）号	US5365537
IPC 分类号	H01S5/028 \| H01S5/00 \| H01S5/18 \| H01S5/022 \| H01S5/227 \| H01S5/20 \| H01S5/02 \| H01S3/19
专利代理人	-
代理机构	KODA AND ANDROLIA
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/39110
专题	半导体激光器专利数据库
作者单位	CLARION CO. LTD.
推荐引用方式 GB/T 7714	SATO, KIYOTAKA,TOGURA, KENJI. Method of producing a semiconductor laser. US5365537[P]. 1994-11-15.

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