Manufacture of semiconductive bodies

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	Manufacture of semiconductive bodies
其他题名	Manufacture of semiconductive bodies
	-
	1965-06-02
专利权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
公开日期	1965-06-02
授权国家	英国
专利类型	授权发明
摘要	993,822. Lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Nov. 22, 1963 [Dec. 31, 1962], No. 46114/63. Heading H3B. [Also in Division H1] A semi - conductor crystal suitable for a laser has a portion with planar side faces projecting from one large area face, the area at the level of the face being less than that of the tip of the portion and one side face being parallel with a particular crystallographic plane. Fig. 1 shows a semi-conductor device such as an injection laser comprising a gallium arsenide body 10 with a protruding portion 12 containing PN junction 14. The device ia manufactured by diffusing zinc into an N-type gallium arsenide wafer to form a PN junction, cutting grooves as shown in Fig. 4b, masking with an etch resist which is removed to expose the corner regions which are etched to provide undercut regions 20, 22, as shown in Fig. 4e, and then slicing the wafer down the plane of minimum bond strength by a cleavage member such as blade 48, to expose optically flat, accurately positioned, planar edges to the portions which project from the main body. Fig. 2 shows a structure incorporating a plurality of such elements each being associated with an electrode and its own current source so that each may act as a laser. Light emitted from the PN junction of element 68 is directed precisely to the emission stimulation region of element 66 so that this element may be stimulated either electrically or optically. Other optical paths are possible between the various elements so that multiple input and logical switching operations may be performed. Optical properties may be improved by coatings or immersion in appropriate liquid or solid media. Different materials may be used to provide different optical wavelengths. The invention may be used for other types of junction semiconductor devices and indium phosphide, indium antimonide, germanium and silicon may be used as the semi-conductor. Cleavage of the crystal may be effected by sand blasting or ultrasonic techniques.
其他摘要	993822。激光器。国际商业机器公司。 1963年11月22日[Dec. [1962]，第46114/63号。标题H3B。 [也在H1部分]适用于激光器的半导体晶体具有从一个大面积面突出的平面侧面的部分，面的水平面积小于该部分的尖端的面积和一侧的面积面与特定的晶面平行。图1示出了诸如注入激光器的半导体器件，其包括具有包含PN结14的突出部分12的砷化镓体10.该器件通过将锌扩散到N型砷化镓晶片中以形成PN结而制造。如图4b所示，切割凹槽，用蚀刻抗蚀剂掩蔽，去除蚀刻抗蚀剂以露出蚀刻的角区域，以提供底切区域20,22，如图4e所示，然后沿着平面切割晶片。通过诸如刀片48的解理构件的最小粘合强度，以暴露光学平坦的，精确定位的平面边缘到从主体伸出的部分。图2示出了包含多个这样的元件的结构，每个元件与电极和它自己的电流源相关联，使得每个元件可以用作激光器。从元件68的PN结发射的光被精确地引导到元件66的发射刺激区域，使得可以电或光学地刺激该元件。在各种元件之间可以有其他光路，从而可以执行多个输入和逻辑切换操作。可以通过涂覆或浸入适当的液体或固体介质中来改善光学性质。可以使用不同的材料来提供不同的光学波长。本发明可用于其他类型的结半导体器件，并且磷化铟，锑化铟，锗和硅可用作半导体。可以通过喷砂或超声波来实现晶体的裂解技术。
授权日期	1965-06-02
申请日期	1963-11-22
专利号	GB993822A
专利状态	失效
申请号	GB1963046114
公开（公告）号	GB993822A
IPC 分类号	H01S5/30 \| H01L21/304 \| H01L27/146 \| H01L21/00 \| H01S5/40 \| H01L21/02 \| H01S5/00 \| H01S5/22 \| H01S5/50
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38955
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	-. Manufacture of semiconductive bodies. GB993822A[P]. 1965-06-02.

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