Optical device structure using GaN substrates for laser applications

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	Optical device structure using GaN substrates for laser applications
其他题名	Optical device structure using GaN substrates for laser applications
	RARING, JAMES W.; FEEZELL, DANIEL F.; PFISTER, NICHOLAS J.; SHARMA, RAJAT; SCHMIDT, MATHEW C.; ELSASS, CHRISTIANE POBLENZ; CHANG, YU-CHIA
	2017-08-01
专利权人	SORAA LASER DIODE, INC.
公开日期	2017-08-01
授权国家	美国
专利类型	授权发明
摘要	An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
其他摘要	一种光学器件，包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（10-1）的取向为约-1度，朝向（11-20）的取向为约+/- 0.3度。该器件还具有形成在m面非极性晶体取向表面区域的一部分上的激光条纹区域。在优选实施例中，激光条纹区域的特征在于腔体取向基本上平行于c方向，激光条纹区域具有第一端和第二端。该装置包括涂覆的第一切割的c面小平面，其设置在激光条纹区域的第一端上。该装置还具有暴露的第二切割的c面小平面，其设置在激光条纹区域的第二端上。
授权日期	2017-08-01
申请日期	2015-06-11
专利号	US9722398
专利状态	授权
申请号	US14/736939
公开（公告）号	US9722398
IPC 分类号	H01L21/00 \| H01S5/22 \| H01S5/028 \| H01S5/20 \| H01S5/32 \| H01S5/343 \| B82Y20/00 \| H01S5/02 \| H01L21/02
专利代理人	-
代理机构	KILPATRICK TOWNSEND & STOCKTON, LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38671
专题	半导体激光器专利数据库
作者单位	SORAA LASER DIODE, INC.
推荐引用方式 GB/T 7714	RARING, JAMES W.,FEEZELL, DANIEL F.,PFISTER, NICHOLAS J.,et al. Optical device structure using GaN substrates for laser applications. US9722398[P]. 2017-08-01.

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