Xi'an Institute of Optics and Precision Mechanics,CAS
Etched trenches in bond materials for die singulation, and associated systems and methods | |
其他题名 | Etched trenches in bond materials for die singulation, and associated systems and methods |
ODNOBLYUDOV, VLADIMIR; SCHELLHAMMER, SCOTT D.; FREI, JEREMY S. | |
2015-02-10 | |
专利权人 | MICRON TECHNOLOGY, INC. |
公开日期 | 2015-02-10 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material. |
其他摘要 | 公开了用于芯片分割的键合材料中的蚀刻沟槽,以及相关的系统和方法。根据一个实施例的用于固态换能器器件分割的方法包括通过蚀刻穿过金属键合材料形成多个沟槽,所述金属键合材料在载体衬底和多个管芯之间形成键合,并沿着沟槽分离载体衬底以分离死亡。在特定实施例中,沟槽延伸到载体衬底中。在进一步的特定实施例中,管芯至少部分地封装在介电材料中。 |
授权日期 | 2015-02-10 |
申请日期 | 2012-03-08 |
专利号 | US8952413 |
专利状态 | 授权 |
申请号 | US13/415677 |
公开(公告)号 | US8952413 |
IPC 分类号 | H01L33/00 | H01L21/00 |
专利代理人 | - |
代理机构 | PERKINS COIE LLP |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/38594 |
专题 | 半导体激光器专利数据库 |
作者单位 | MICRON TECHNOLOGY, INC. |
推荐引用方式 GB/T 7714 | ODNOBLYUDOV, VLADIMIR,SCHELLHAMMER, SCOTT D.,FREI, JEREMY S.. Etched trenches in bond materials for die singulation, and associated systems and methods. US8952413[P]. 2015-02-10. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US8952413.PDF(604KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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