Group III nitride semiconductor multilayer structure and production method thereof

OPT OpenIR > 半导体激光器专利数据库

	Group III nitride semiconductor multilayer structure and production method thereof
其他题名	Group III nitride semiconductor multilayer structure and production method thereof
	HANAWA, KENZO; SASAKI, YASUMASA
	2012-07-03
专利权人	TOYODA GOSEI CO., LTD.
公开日期	2012-07-03
授权国家	美国
专利类型	授权发明
摘要	According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.
其他摘要	根据本发明，具有高结晶度的AlN晶体膜种子层与选择性/横向生长相结合，由此可以获得结晶度更高的III族氮化物半导体多层结构。本发明的第III族氮化物半导体多层结构是第III族氮化物半导体多层结构，其中在C面蓝宝石衬底表面上形成具有200nm或更大的晶粒边界间隔的AlN晶体膜作为种子层。溅射方法和底层，n型半导体层，发光层和p型半导体层，每个都由III族氮化物半导体构成，进一步堆叠，其中存在种子层的区域并且在C面蓝宝石衬底表面上形成和/或不存在能够外延生长并且不能外延生长的区域形成在下层中。
授权日期	2012-07-03
申请日期	2009-07-30
专利号	US8211727
专利状态	授权
申请号	US13/057696
公开（公告）号	US8211727
IPC 分类号	H01L21/00
专利代理人	-
代理机构	SUGHRUE MION,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38503
专题	半导体激光器专利数据库
作者单位	TOYODA GOSEI CO., LTD.
推荐引用方式 GB/T 7714	HANAWA, KENZO,SASAKI, YASUMASA. Group III nitride semiconductor multilayer structure and production method thereof. US8211727[P]. 2012-07-03.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US8211727.PDF（701KB）	专利		开放获取	CC BY-NC-SA	请求全文