Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method

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	Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
其他题名	Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
	HATORI, NOBUAKI; YAMAMOTO, TSUYOSHI; SUDO, HISAO; ARAKAWA, YASUHIKO
	2012-07-31
专利权人	FUJITSU LIMITED
公开日期	2012-07-31
授权国家	美国
专利类型	授权发明
摘要	An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.
其他摘要	具有p型量子点结构的有源层设置在由第一导电类型的半导体材料制成的下包层上。上包层设置在有源层上。上包覆层由半导体材料制成，并包括脊部和覆盖部。脊部沿一个方向延伸，并且盖部覆盖脊部两侧的表面。电容减小区域设置在脊部分的两侧并且至少到达覆盖部分的下表面。电容减小区域具有第一导电类型或比脊部分的电阻率高的电阻率，并且脊部分具有第二导电类型。如果下包层是n型，则电容减小区域至少到达下包层的上表面。
授权日期	2012-07-31
申请日期	2009-06-18
专利号	US8232125
专利状态	授权
申请号	US12/457677
公开（公告）号	US8232125
IPC 分类号	H01L21/00 \| B82Y20/00 \| H01S5/22 \| H01S5/343
专利代理人	-
代理机构	KRATZ,QUINTOS & HANSON,LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38499
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	HATORI, NOBUAKI,YAMAMOTO, TSUYOSHI,SUDO, HISAO,et al. Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method. US8232125[P]. 2012-07-31.

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