Nitride semiconductor laser element and method for manufacturing the same

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	Nitride semiconductor laser element and method for manufacturing the same
其他题名	Nitride semiconductor laser element and method for manufacturing the same
	KAMIKAWA, TAKESHI; KAWAGUCHI, YOSHINOBU
	2010-04-06
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2010-04-06
授权国家	美国
专利类型	授权发明
摘要	A substrate with a nitride semiconductor layer is cleaved to form resonator end faces, on which a coating film is formed so as to make a nitride semiconductor laser bar. This is divided into nitride semiconductor laser elements. Prior to forming the coating film on the resonator end face, the resonator end face is exposed to a plasma atmosphere generated from the gas containing nitrogen gas. When a ratio of nitrogen to gallium in the surface of the resonator end face before the exposure is represented by “a”, an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face before the exposure is represented by “b”, a ratio of nitrogen to gallium in the surface of the resonator end face after the exposure to the first plasma atmosphere is represented by “d”, and an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face after the exposure is represented by “e”, the value “g” that is expressed by g=(b·d)/(a·e) is set to a value that satisfies g≧0.8.
其他摘要	将具有氮化物半导体层的基板切割以形成谐振器端面，在该谐振器端面上形成涂膜以制造氮化物半导体激光器条。这分为氮化物半导体激光元件。在谐振器端面上形成涂膜之前，谐振器端面暴露于由含氮气体产生的等离子体气氛。当在曝光之前谐振器端面的表面中氮与镓的比率由“a”表示时，在曝光之前从谐振器端面的表面内的氮与镓的比率的平均值由“ b“，暴露于第一等离子体气氛后谐振器端面表面中氮与镓的比率用”d“表示，并且谐振器端表面内氮与镓之比的平均值将曝光后的面用“e”表示，将由g =（b·d）/（a·e）表示的值“g”设定为满足g≥0.8的值。
授权日期	2010-04-06
申请日期	2006-08-08
专利号	US7691653
专利状态	失效
申请号	US11/500334
公开（公告）号	US7691653
IPC 分类号	H01L21/00
专利代理人	-
代理机构	HARNESS,DICKEY & PIERCE,P.L.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38308
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KAMIKAWA, TAKESHI,KAWAGUCHI, YOSHINOBU. Nitride semiconductor laser element and method for manufacturing the same. US7691653[P]. 2010-04-06.

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