Method for controlling the structure and surface qualities of a thin film and product produced thereby

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	Method for controlling the structure and surface qualities of a thin film and product produced thereby
其他题名	Method for controlling the structure and surface qualities of a thin film and product produced thereby
	WONG, WILLIAM S.; KNEISSL, MICHAEL A.; TEEPE, MARK
	2009-03-10
专利权人	PALO ALTO RESEARCH CENTER INCORPORATED
公开日期	2009-03-10
授权国家	美国
专利类型	授权发明
摘要	A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
其他摘要	在从半导体结构移除衬底和模板层之后提供改善的表面质量的系统和方法在将散热器/导电衬底键合到层之前为层（例如量子阱异质结构有源区域）提供改善的表面质量。结构体。在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。该牺牲涂层提供平坦表面，通常平行于下层的界面的平面。选择牺牲涂层和蚀刻条件，使得牺牲涂层的蚀刻速率大致匹配GaN和下面的层的蚀刻速率，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。在蚀刻之后，将衬底键合到暴露表面，该暴露表面用作散热器并且可以是导电的，提供与有源区域的背面电接触。
授权日期	2009-03-10
申请日期	2006-02-17
专利号	US7501299
专利状态	授权
申请号	US11/356699
公开（公告）号	US7501299
IPC 分类号	H01L21/00
专利代理人	-
代理机构	SMALL, JONATHAN A.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38288
专题	半导体激光器专利数据库
作者单位	PALO ALTO RESEARCH CENTER INCORPORATED
推荐引用方式 GB/T 7714	WONG, WILLIAM S.,KNEISSL, MICHAEL A.,TEEPE, MARK. Method for controlling the structure and surface qualities of a thin film and product produced thereby. US7501299[P]. 2009-03-10.

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