Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices

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	Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
其他题名	Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
	WHITE, HENRY W.; RYU, YUNGRYEL; LEE, TAE-SEOK
	2010-11-02
专利权人	MOXTRONICS, INC.
公开日期	2010-11-02
授权国家	美国
专利类型	授权发明
摘要	A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as the synthesis of undoped and/or doped metal-based oxide alloy thin films.
其他摘要	根据本发明的混合束沉积（HBD）系统和方法利用脉冲激光沉积（PLD）技术和设备的独特组合以及提供自由氧rf-等离子体流以有效增加可用的通量密度的设备和技术。在沉积基底上的活性氧用于有效合成金属氧化物薄膜。本发明的HBD系统和方法进一步将分子束外延（MBE）和/或化学气相沉积（CVD）技术和设备与PLD设备和技术以及自由基氧rf-等离子体流结合以提供元素源材料。用于合成未掺杂和/或掺杂的金属氧化物薄膜以及合成未掺杂和/或掺杂的金属基氧化物合金薄膜。
授权日期	2010-11-02
申请日期	2003-08-27
专利号	US7824955
专利状态	失效
申请号	US10/525611
公开（公告）号	US7824955
IPC 分类号	H01L21/00 \| H01L21/16 \| C30B23/08 \| C23C14/00 \| C23C14/08 \| C23C14/28 \| C30B23/02 \| C30B25/02 \| C30B25/10 \| C30B29/16 \| C30B35/00 \| H01L21/205 \| H01L21/265 \| H01L21/363 \| H01L21/443 \| H01L29/205 \| H01L29/267 \| H01L31/04 \| H01L33/00
专利代理人	-
代理机构	JACOBS & KIM LLP JACOBS, DAVID
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38173
专题	半导体激光器专利数据库
作者单位	MOXTRONICS, INC.
推荐引用方式 GB/T 7714	WHITE, HENRY W.,RYU, YUNGRYEL,LEE, TAE-SEOK. Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices. US7824955[P]. 2010-11-02.

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