Xi'an Institute of Optics and Precision Mechanics,CAS
Dislocation reduction in non-polar gallium nitride thin films | |
其他题名 | Dislocation reduction in non-polar gallium nitride thin films |
CRAVEN, MICHAEL D.; DENBAARS, STEVEN P.; SPECK, JAMES STEPHEN | |
2005-05-31 | |
专利权人 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
公开日期 | 2005-05-31 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth. |
其他摘要 | 非极性(11 {overscore(2)} 0)a面GaN种子层的横向外延过度生长减少了GaN膜中的穿透位错。首先,将薄图案化的电介质掩模应用于种子层。其次,执行选择性外延再生长以基于图案化掩模实现横向过度生长。在再生长时,GaN膜最初通过介电掩模中的开口垂直生长,然后在垂直于垂直生长方向的方向上横向过度生长掩模。通过以下方式减少在过度生长区域中的穿线位错:(1)掩模阻挡位错垂直传播到生长膜中;和(2)通过从垂直向横向生长的过渡弯曲位错。 |
授权日期 | 2005-05-31 |
申请日期 | 2003-04-15 |
专利号 | US6900070 |
专利状态 | 授权 |
申请号 | US10/413913 |
公开(公告)号 | US6900070 |
IPC 分类号 | C30B25/18 | C30B25/10 | C30B29/60 | C30B25/02 | C30B25/04 | C30B29/00 | H01L21/02 | H01L21/205 | C23C16/04 | C30B29/38 | C30B29/40 | H01S5/343 | H01L21/00 |
专利代理人 | - |
代理机构 | GATES & COOPER LLP |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/38153 |
专题 | 半导体激光器专利数据库 |
作者单位 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
推荐引用方式 GB/T 7714 | CRAVEN, MICHAEL D.,DENBAARS, STEVEN P.,SPECK, JAMES STEPHEN. Dislocation reduction in non-polar gallium nitride thin films. US6900070[P]. 2005-05-31. |
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文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US6900070.PDF(318KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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