Xi'an Institute of Optics and Precision Mechanics,CAS
High-efficiency vertical emitters with improved heat sinking | |
其他题名 | High-efficiency vertical emitters with improved heat sinking |
LIN, CHIN HAN; SAWYER, KEVIN A.; MACKINNON, NEIL; RAJU, VENKATARAM R.; LI, WEIPING; FAN, XIAOFENG | |
2017-11-14 | |
专利权人 | APPLE INC. |
公开日期 | 2017-11-14 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink. |
其他摘要 | 用于制造光电器件的方法包括在半导体衬底上制造多个垂直发射器。发射器的各个顶表面结合到散热器,之后在发射器的相应底表面下方移除半导体衬底。阳极和阴极触点都连接到底表面,以便驱动发射器从底表面发射光。在另一个实施例中,半导体衬底的上表面接合到具有通孔的载体衬底,所述通孔与发射器的相应顶表面对准,之后在发射器的相应底表面下方移除半导体衬底,并且相应的发射器的底表面粘合到散热器上。 |
授权日期 | 2017-11-14 |
申请日期 | 2016-02-10 |
专利号 | US9819144 |
专利状态 | 授权 |
申请号 | US15/019981 |
公开(公告)号 | US9819144 |
IPC 分类号 | H01S3/04 | H01S5/024 | H01S5/42 | H01S5/00 | H01S5/022 | H01S5/02 |
专利代理人 | - |
代理机构 | D. KLIGLER IP SERVICES LTD. |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/37872 |
专题 | 半导体激光器专利数据库 |
作者单位 | APPLE INC. |
推荐引用方式 GB/T 7714 | LIN, CHIN HAN,SAWYER, KEVIN A.,MACKINNON, NEIL,et al. High-efficiency vertical emitters with improved heat sinking. US9819144[P]. 2017-11-14. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US9819144.PDF(576KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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