Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser

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	Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser
其他题名	Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser
	HAYAKAWA, JUNICHIRO; TAKEDA, KAZUTAKA; MURAKAMI, AKEMI
	2016-02-02
专利权人	FUJI XEROX CO., LTD.
公开日期	2016-02-02
授权国家	美国
专利类型	授权发明
摘要	A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked in this order on the substrate. A columnar structure having a top portion, a side surface, and a bottom portion is formed from the second semiconductor multilayer reflector to the semiconductor layer. The heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure.
其他摘要	表面发射半导体激光器包括衬底，第一导电型第一半导体多层反射器，有源层，半导体层，包括电流限制层的第二导电型第二半导体多层反射器，以及散热金属构件。至少第一半导体多层反射器，有源层，半导体层和第二半导体多层反射器以此顺序堆叠在基板上。从第二半导体多层反射器到半导体层形成具有顶部，侧表面和底部的柱状结构。散热用金属构件连接到在柱状结构的底部露出的半导体层。
授权日期	2016-02-02
申请日期	2014-05-12
专利号	US9252562
专利状态	授权
申请号	US14/275227
公开（公告）号	US9252562
IPC 分类号	H01S5/24 \| H01S5/42 \| H04B10/50 \| H01S5/183 \| G03G15/04 \| H01L33/04 \| H01L33/06 \| H01L33/38 \| H01L33/10 \| H01L33/64 \| H01S5/024 \| H01S5/042
专利代理人	-
代理机构	OLIFF PLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37750
专题	半导体激光器专利数据库
作者单位	FUJI XEROX CO., LTD.
推荐引用方式 GB/T 7714	HAYAKAWA, JUNICHIRO,TAKEDA, KAZUTAKA,MURAKAMI, AKEMI. Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser. US9252562[P]. 2016-02-02.

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