Discontinuous patterned bonds for semiconductor devices and associated systems and methods

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	Discontinuous patterned bonds for semiconductor devices and associated systems and methods
其他题名	Discontinuous patterned bonds for semiconductor devices and associated systems and methods
	SCHELLHAMMER, SCOTT, D.; ODNOBLYUDOV, VLADIMIR; FREI, JEREMY, S.
	2018-05-16
专利权人	MICRON TECHNOLOGY, INC.
公开日期	2018-05-16
授权国家	欧洲专利局
专利类型	授权发明
摘要	Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
其他摘要	本文公开了用于半导体器件的不连续键合。根据特定实施例的器件包括第一衬底和第二衬底，第一衬底和第二衬底中的至少一个具有多个固态换能器。第二基板可以包括多个凸起和多个中间区域，并且可以通过不连续的结合结合到第一基板。各个固态换能器可以至少部分地设置在相应的中间区域内，并且不连续的键合可以包括将各个固态换能器结合到相应的中间区域的盲端的结合材料。本文公开了用于半导体器件的不连续键的相关方法和系统。
授权日期	2018-05-16
申请日期	2012-08-14
专利号	EP2751831B1
专利状态	授权
申请号	EP2012827286
公开（公告）号	EP2751831B1
IPC 分类号	H01L21/20 \| H01L21/02 \| H01L33/00 \| H01L33/62 \| H01L21/18 \| H01L23/495 \| H01L23/00 \| H01L21/447 \| H01S5/00
专利代理人	-
代理机构	CARPMAELS & RANSFORD LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37601
专题	半导体激光器专利数据库
作者单位	MICRON TECHNOLOGY, INC.
推荐引用方式 GB/T 7714	SCHELLHAMMER, SCOTT, D.,ODNOBLYUDOV, VLADIMIR,FREI, JEREMY, S.. Discontinuous patterned bonds for semiconductor devices and associated systems and methods. EP2751831B1[P]. 2018-05-16.