Semiconductor light emitting element and method for manufacturing semiconductor light emitting device

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	Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
其他题名	Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
	KAMEI, HIDENORI
	2011-05-31
专利权人	PANASONIC CORPORATION
公开日期	2011-05-31
授权国家	美国
专利类型	授权发明
摘要	In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield. A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.
其他摘要	在半导体发光器件中，光从衬底的侧表面损失;因此，如果基板侧表面占据大面积，则会降低光提取效率。可以通过减小基板的厚度来减小基板侧表面的面积。然而，薄基板具有低机械强度并且在工作过程中由应力破裂，并且降低了产量。在基板上形成发光层。在用蜡固定到研磨板上之后，将基材研磨成薄。然后将支撑基底粘合到基底上以进行增强。将基板固定到电极等，其中支撑基板粘合到基板上。最后移除支撑基板。
授权日期	2011-05-31
申请日期	2008-02-19
专利号	US7951625
专利状态	授权
申请号	US12/518388
公开（公告）号	US7951625
IPC 分类号	H01L33/52 \| H01L33/00 \| H01L33/22
专利代理人	-
代理机构	MCDERMOTT WILL & EMERY LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37364
专题	半导体激光器专利数据库
作者单位	PANASONIC CORPORATION
推荐引用方式 GB/T 7714	KAMEI, HIDENORI. Semiconductor light emitting element and method for manufacturing semiconductor light emitting device. US7951625[P]. 2011-05-31.

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