Substrate for device bonding and method for manufacturing same

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	Substrate for device bonding and method for manufacturing same
其他题名	Substrate for device bonding and method for manufacturing same
	YOKOYAMA, HIROKI
	2009-12-01
专利权人	TOKUYAMA CORPORATION
公开日期	2009-12-01
授权国家	美国
专利类型	授权发明
摘要	A substrate for device bonding is provided, which enables bonding of a device with high bond strength to an Au electrode formed on a substrate such as aluminum nitride by soldering the device at a low temperature using a soft solder metal having a low melting point such as an Au—Sn-based solder having an Au content of 10% by weight. The substrate for device bonding comprises a substrate having an Au electrode layer formed on its surface and in which (i) a layer composed of a platinum group element, (ii) a layer composed of at least one transition metal element selected from the group consisting of Ti, V, Cr and Co, (iii) a barrier metal layer composed of at least one metal selected from the group consisting of Ag, Cu and Ni and (iv) a solder layer composed of a solder containing Sn or In as a main component are laminated in this order on the Au electrode layer.
其他摘要	提供一种用于器件键合的衬底，其通过使用具有低熔点的软焊料金属（例如，低熔点）在低温下焊接器件，能够将具有高键合强度的器件键合到形成在诸如氮化铝的衬底上的Au电极上。 Au含量为10％（重量）的Au-Sn基焊料。用于器件键合的衬底包括具有在其表面上形成的Au电极层的衬底，其中（i）由铂族元素组成的层，（ii）由选自由以下组成的组中的至少一种过渡金属元素组成的层Ti，V，Cr和Co，（iii）由选自Ag，Cu和Ni中的至少一种金属组成的阻挡金属层和（iv）由包含Sn或In的焊料组成的焊料层主要成分按此顺序层叠在Au电极层上。
授权日期	2009-12-01
申请日期	2005-03-24
专利号	US7626264
专利状态	失效
申请号	US10/593602
公开（公告）号	US7626264
IPC 分类号	H01L23/48 \| H01L23/28 \| H01L21/52 \| H01L21/60 \| H01L23/12 \| H01L23/485 \| H01L23/488 \| H01L23/498
专利代理人	-
代理机构	THE WEBB LAW FIRM
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37136
专题	半导体激光器专利数据库
作者单位	TOKUYAMA CORPORATION
推荐引用方式 GB/T 7714	YOKOYAMA, HIROKI. Substrate for device bonding and method for manufacturing same. US7626264[P]. 2009-12-01.

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