Xi'an Institute of Optics and Precision Mechanics,CAS
Mutually injection locked lasers for enhanced frequency response | |
其他题名 | Mutually injection locked lasers for enhanced frequency response |
TAUKE-PEDRETTI, ANNA; SKOGEN, ERIK J.; VAWTER, GREGORY A.; CHOW, WENG W. | |
2014-04-01 | |
专利权人 | NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC |
公开日期 | 2014-04-01 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other. |
其他摘要 | 半导体发光器件;提供了形成半导体发光器件的方法,以及操作半导体发光器件的方法。半导体发光器件包括在公共衬底上与第二激光器部分单片集成的第一激光器部分。每个激光器部分具有相位部分,增益部分和至少一个分布式布拉格反射器(DBR)结构。第一激光器部分和第二激光器部分光学耦合以允许它们之间的光学反馈。每个相位部分被配置为相对于彼此独立地调谐第一激光器部分和第二激光器部分中的相应一个。 |
授权日期 | 2014-04-01 |
申请日期 | 2011-09-15 |
专利号 | US8687665 |
专利状态 | 授权 |
申请号 | US13/233221 |
公开(公告)号 | US8687665 |
IPC 分类号 | H01S3/082 | H01S5/00 | H01S3/82 |
专利代理人 | FINSTON, MARTIN I. |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/35620 |
专题 | 半导体激光器专利数据库 |
作者单位 | NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC |
推荐引用方式 GB/T 7714 | TAUKE-PEDRETTI, ANNA,SKOGEN, ERIK J.,VAWTER, GREGORY A.,et al. Mutually injection locked lasers for enhanced frequency response. US8687665[P]. 2014-04-01. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US8687665.PDF(1369KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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