Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits

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	Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits
其他题名	Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits
	THEN, HAN WUI; WALTER, GABRIEL; FENG, MILTON; HOLONYAK, JR., NICK
	2011-08-23
专利权人	BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE
公开日期	2011-08-23
授权国家	美国
专利类型	授权发明
摘要	A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.
其他摘要	一种响应于高频电输入信号产生宽带激光发射的方法，包括以下步骤：提供具有集电极，基极和发射极区的异质结双极晶体管器件;在基极区域中提供至少一个量子尺寸区域，并将至少一部分基极区域封闭在光学谐振腔中;耦合电信号，包括高频电输入信号，相对于集电极，基极和发射极区域，以引起来自晶体管器件的激光发射;并且减小晶体管激光器装置的操作β，以响应高频电信号增强激光发射的光学带宽。
授权日期	2011-08-23
申请日期	2009-10-14
专利号	US8005124
专利状态	授权
申请号	US12/587895
公开（公告）号	US8005124
IPC 分类号	H01S5/00
专利代理人	-
代理机构	NOVACK, MARTIN
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/35600
专题	半导体激光器专利数据库
作者单位	BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE
推荐引用方式 GB/T 7714	THEN, HAN WUI,WALTER, GABRIEL,FENG, MILTON,et al. Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits. US8005124[P]. 2011-08-23.

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