Xi'an Institute of Optics and Precision Mechanics,CAS
Method of improving the fabrication of etched semiconductor devices | |
其他题名 | Method of improving the fabrication of etched semiconductor devices |
JOSEPH, JOHN R.; LUO, WENLIN; LEAR, KEVIN L.; BRYAN, ROBERT P. | |
2003-11-11 | |
专利权人 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, U.S.A., INC. |
公开日期 | 2003-11-11 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad. |
其他摘要 | 本发明涉及一种通过在烃平面化材料上使用图案化的粘合促进剂层来改进蚀刻的半导体器件的制造的方法。更具体地,本发明通过在碳氢化合物平坦化材料和金属互连层之间插入诸如氮化硅的粘附促进层来改善金属互连层与诸如聚酰亚胺的碳氢化合物平坦化材料的结合。一种改进蚀刻半导体器件制造的方法,包括步骤:(1)在衬底上沉积碳氢化合物平坦化材料; (2)在碳氢化合物平坦化材料上沉积粘合促进剂; (3)限定第一掩模并回蚀粘合促进剂,以在部分烃平面化材料上形成粘合促进剂垫; (4)在粘合促进剂垫上沉积第一金属。 |
授权日期 | 2003-11-11 |
申请日期 | 2001-06-01 |
专利号 | US6645848 |
专利状态 | 授权 |
申请号 | US09/872747 |
公开(公告)号 | US6645848 |
IPC 分类号 | H01L21/70 | H01L21/768 | H01L23/52 | H01L23/48 | H01L23/532 | H01L23/485 | H01S5/183 | H01S5/00 | H01S5/042 | H01L21/3105 | H01L21/476 | H01L21/4763 |
专利代理人 | - |
代理机构 | WHITE & CASE LLP |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/35415 |
专题 | 半导体激光器专利数据库 |
作者单位 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, U.S.A., INC. |
推荐引用方式 GB/T 7714 | JOSEPH, JOHN R.,LUO, WENLIN,LEAR, KEVIN L.,et al. Method of improving the fabrication of etched semiconductor devices. US6645848[P]. 2003-11-11. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US6645848.PDF(120KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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