Xi'an Institute of Optics and Precision Mechanics,CAS
Electrode structure, process for fabricating electrode structure and semiconductor light-emitting device | |
其他题名 | Electrode structure, process for fabricating electrode structure and semiconductor light-emitting device |
OHSAKA, SHIGEO; DOMOTO, SHINICHI; OKADA, NOBUMASA | |
2004-08-17 | |
专利权人 | FUJITSU QUANTUM DEVICES LIMITED |
公开日期 | 2004-08-17 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | An electrode structure includes a conductive film 24c formed on a base substrate 10 through an insulation film. The insulation film comprises a plurality of poles 36 of polyimide, a first film 38 formed on the side surfaces of the poles and formed of an insulation material of a high hardness than polyimide, and a second film 40 of polyimide buried among the plural poles with the first film formed on the side surfaces thereof. Because of the first film of an insulation material having high hardness formed on the side surfaces of the poles of polyimide, even when a strong force is applied upon the bonding, the poles are prevented from being distorted, and the conductive film is protected from peeling off. Because of the thick polyimide layer below the conductive film, a parasitic capacity between the conductive film and the lower layer can be small, whereby radio-frequency signals can be used. |
其他摘要 | 电极结构包括通过绝缘膜形成在基础基板10上的导电膜24c。绝缘膜包括多个聚酰亚胺极36,形成在极的侧表面上的第一膜38,其由比聚酰亚胺高的硬度的绝缘材料形成,以及埋在多个极中的聚酰亚胺的第二膜40。第一膜形成在其侧表面上。由于在聚酰亚胺的磁极的侧表面上形成具有高硬度的绝缘材料的第一膜,即使在接合时施加强力,也可防止磁极变形,并且保护导电膜免于剥离关闭。由于导电膜下面的厚聚酰亚胺层,导电膜和下层之间的寄生电容可以很小,从而可以使用射频信号。 |
授权日期 | 2004-08-17 |
申请日期 | 1999-12-08 |
专利号 | US6778572 |
专利状态 | 失效 |
申请号 | US09/456531 |
公开(公告)号 | US6778572 |
IPC 分类号 | H01S5/042 | H01S5/00 | H01S5/02 | H01L21/60 | H01L29/40 |
专利代理人 | - |
代理机构 | ARMSTRONG,KRATZ,QUINTOS,HANSON & BROOKS,LLP |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/35327 |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU QUANTUM DEVICES LIMITED |
推荐引用方式 GB/T 7714 | OHSAKA, SHIGEO,DOMOTO, SHINICHI,OKADA, NOBUMASA. Electrode structure, process for fabricating electrode structure and semiconductor light-emitting device. US6778572[P]. 2004-08-17. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US6778572.PDF(215KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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