Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate

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	Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
其他题名	Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
	HONG, CHANG-HEE; KIM, SUN TAE
	2001-01-23
专利权人	LG ELECTRONICS INC.
公开日期	2001-01-23
授权国家	美国
专利类型	授权发明
摘要	Method for forming a single crystal GaN semiconductor substrate and a GaN diode with the substrate is disclosed which forms in a short time period, has a low crystal defect concentration and allows forming a size large enough to fabricate an optical device, the method including either the steps of fast growth of a GaN group material on an oxide substrate to a thickness without cracking and subjecting to mechanical polish to remove a portion of the oxide substrate, and growing GaN again on the grown GaN layer and complete removal of the remaining oxide substrate to obtain a GaN film, or the steps of separating the oxide substrate from the GaN layer utilizing cooling to obtain a GaN film, grown GaN on the GaN film to a predetermined thickness to form a GaN bulk single crystal and mirror polishing it to form the GaN single crystal substrate, whereby a defectless GaN single crystal substrate of a size required for fabrication of an optical device can be obtained within a short time period because fast homoeptaxial growth of a GaN film is allowed.
其他摘要	公开了形成单晶GaN半导体衬底的方法和具有衬底的GaN二极管，其在短时间内形成，具有低晶体缺陷浓度并且允许形成足够大的尺寸以制造光学器件，该方法包括：将氧化物基板上的GaN族材料快速生长至厚度而不破裂并且进行机械抛光以去除氧化物基板的一部分，并且在生长的GaN层上再次生长GaN并且完全去除剩余的氧化物基板的步骤获得GaN膜，或利用冷却从GaN层分离氧化物衬底以获得GaN膜的步骤，在GaN膜上生长GaN至预定厚度以形成GaN块状单晶并对其进行镜面抛光以形成GaN单晶衬底，由此可以在短时间内获得制造光学器件所需尺寸的无缺陷GaN单晶衬底因为允许GaN薄膜快速同质地生长。
授权日期	2001-01-23
申请日期	1997-12-05
专利号	US6177292
专利状态	失效
申请号	US08/985440
公开（公告）号	US6177292
IPC 分类号	C30B25/02 \| H01L21/205 \| H01L21/02 \| H01L33/00 \| H01S5/343 \| H01S5/02 \| H01S5/00 \| C30B29/40 \| H01L33/06 \| H01L33/32 \| H01L21/20 \| H01S3/19
专利代理人	-
代理机构	WHITE, JOHN P. COOPER & DUNHAM LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/35217
专题	半导体激光器专利数据库
作者单位	LG ELECTRONICS INC.
推荐引用方式 GB/T 7714	HONG, CHANG-HEE,KIM, SUN TAE. Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate. US6177292[P]. 2001-01-23.

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