Surface-emitting laser device

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	Surface-emitting laser device
其他题名	Surface-emitting laser device
	LEE, BUN; BAEK, JONG-HYEOB; CHOI, SUNG-WOO; LEE, JIN-HONG
	1999-03-16
专利权人	INTELLECTUAL DISCOVERY CO. LTD.
公开日期	1999-03-16
授权国家	美国
专利类型	授权发明
摘要	An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an InxGa1-xAs thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the InxGa1-xAs grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the InxGa1-xAs thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.
其他摘要	一种改进的表面发射激光器件，通过该装置可以容易地改变发光波长，因为使用具有所需晶格率的薄膜材料生长的电势使用非常小的一部分激活层，并且通过该激光器进行连续振荡通过使用具有高反射率的反射器在室温下。因此，增加了光学特性，其包括GaAs衬底;下部反射器由多层AlAs / GaAs异质薄膜形成，该薄膜在GaAs衬底上具有1的反射率;齿形分级层由下反射器上的下反射器和组成分级方法中具有大晶格率的InxGa1-xAs薄膜形成;在InxGa1-xAs分级层上形成齿形InGaAs分级阱，其In组分比分级层减小;在InxGa1-xAs薄膜上形成缓冲层，并由晶格键合的InP形成;在缓冲层上的InAlAs / InAlGaAs异质薄膜的多层上形成上半导体反射器，其具有1的反射率，其中激光束从其表面发射。
授权日期	1999-03-16
申请日期	1996-11-01
专利号	US5883911
专利状态	失效
申请号	US08/742160
公开（公告）号	US5883911
IPC 分类号	H01S5/183 \| H01S5/00 \| H01S5/343 \| H01S5/32 \| H01S5/34 \| H01S3/00 \| H01S3/19
专利代理人	-
代理机构	ANTONELLI,TERRY,STOUT & KRAUS,LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/35162
专题	半导体激光器专利数据库
作者单位	INTELLECTUAL DISCOVERY CO. LTD.
推荐引用方式 GB/T 7714	LEE, BUN,BAEK, JONG-HYEOB,CHOI, SUNG-WOO,et al. Surface-emitting laser device. US5883911[P]. 1999-03-16.