半導体装置

OPT OpenIR > 半导体激光器专利数据库

	半導体装置; 半導体装置; 半導体装置; 半導体装置
其他题名	半導体装置 ; 半導体装置 ; 半導体装置 ; 半導体装置
	西口勝規; 関口剛
	1996-05-17 ; 1996-05-17 ; 1996-05-17 ; 1996-05-17
专利权人	住友電気工業株式会社 ; 住友電気工業株式会社 ; 住友電気工業株式会社 ; 住友電気工業株式会社
公开日期	1996-07-31 ; 1996-07-31 ; 1996-07-31 ; 1996-07-31
授权国家	日本 ; 日本 ; 日本 ; 日本
专利类型	授权发明 ; 授权发明 ; 授权发明 ; 授权发明
摘要	PURPOSE:To shorten a bonding wire and, at the same time, to enhance the cooling efficiency of a light-emitting device by a method wherein a spacer composed of a material with excellent thermal conductivity is installed between the light-emitting device and a substrate while a connecting terminal of the light-emitting device is situated at the same height as the connecting terminal for an integrated circuit for driving the light-emitting device. CONSTITUTION:A light-emitting diode 13 is mounted on an AlN ceramic substrate 11 via a diamond-made spacer 12, and an integrated circuit 14 for driving the light-emitting device is mounted directly on the substrate 1 The shape of this light-emitting device 13 is an almost rectangular parallelepiped, and the shape of the integrated circuit 14 for driving the light-emitting device is also an almost rectangular parallelepiped. As the spacer 12 which is used to mount the light-emitting device 13, a diamond chip is used. At this kind of circuit, it is possible to shorten the effective length of a bonding wire 15 which connects the light-emitting device 13 to the integrated circuit 14 for driving the light-emitting device.; PURPOSE:To shorten a bonding wire and, at the same time, to enhance the cooling efficiency of a light-emitting device by a method wherein a spacer composed of a material with excellent thermal conductivity is installed between the light-emitting device and a substrate while a connecting terminal of the light-emitting device is situated at the same height as the connecting terminal for an integrated circuit for driving the light-emitting device. CONSTITUTION:A light-emitting diode 13 is mounted on an AlN ceramic substrate 11 via a diamond-made spacer 12, and an integrated circuit 14 for driving the light-emitting device is mounted directly on the substrate 1 The shape of this light-emitting device 13 is an almost rectangular parallelepiped, and the shape of the integrated circuit 14 for driving the light-emitting device is also an almost rectangular parallelepiped. As the spacer 12 which is used to mount the light-emitting device 13, a diamond chip is used. At this kind of circuit, it is possible to shorten the effective length of a bonding wire 15 which connects the light-emitting device 13 to the integrated circuit 14 for driving the light-emitting device.; PURPOSE:To shorten a bonding wire and, at the same time, to enhance the cooling efficiency of a light-emitting device by a method wherein a spacer composed of a material with excellent thermal conductivity is installed between the light-emitting device and a substrate while a connecting terminal of the light-emitting device is situated at the same height as the connecting terminal for an integrated circuit for driving the light-emitting device. CONSTITUTION:A light-emitting diode 13 is mounted on an AlN ceramic substrate 11 via a diamond-made spacer 12, and an integrated circuit 14 for driving the light-emitting device is mounted directly on the substrate 1 The shape of this light-emitting device 13 is an almost rectangular parallelepiped, and the shape of the integrated circuit 14 for driving the light-emitting device is also an almost rectangular parallelepiped. As the spacer 12 which is used to mount the light-emitting device 13, a diamond chip is used. At this kind of circuit, it is possible to shorten the effective length of a bonding wire 15 which connects the light-emitting device 13 to the integrated circuit 14 for driving the light-emitting device.; PURPOSE:To shorten a bonding wire and, at the same time, to enhance the cooling efficiency of a light-emitting device by a method wherein a spacer composed of a material with excellent thermal conductivity is installed between the light-emitting device and a substrate while a connecting terminal of the light-emitting device is situated at the same height as the connecting terminal for an integrated circuit for driving the light-emitting device. CONSTITUTION:A light-emitting diode 13 is mounted on an AlN ceramic substrate 11 via a diamond-made spacer 12, and an integrated circuit 14 for driving the light-emitting device is mounted directly on the substrate 1 The shape of this light-emitting device 13 is an almost rectangular parallelepiped, and the shape of the integrated circuit 14 for driving the light-emitting device is also an almost rectangular parallelepiped. As the spacer 12 which is used to mount the light-emitting device 13, a diamond chip is used. At this kind of circuit, it is possible to shorten the effective length of a bonding wire 15 which connects the light-emitting device 13 to the integrated circuit 14 for driving the light-emitting device.
其他摘要	用途：缩短键合线，同时通过在发光器件和基板之间安装由导热性优异的材料构成的间隔物的方法来提高发光器件的冷却效率而发光装置的连接端子位于与用于驱动发光装置的集成电路的连接端子相同的高度。组成：发光二极管13通过金刚石制成的垫片12安装在AlN陶瓷基板11上，并且用于驱动发光器件的集成电路14直接安装在基板11上。发光器件13是近似长方体，并且用于驱动发光器件的集成电路14的形状也是近似长方体。作为用于安装发光装置13的间隔物12，使用金刚石芯片。在这种电路中，可以缩短将发光器件13连接到用于驱动发光器件的集成电路14的接合线15的有效长度。; 用途：缩短键合线，同时通过在发光器件和基板之间安装由导热性优异的材料构成的间隔物的方法来提高发光器件的冷却效率而发光装置的连接端子位于与用于驱动发光装置的集成电路的连接端子相同的高度。组成：发光二极管13通过金刚石制成的垫片12安装在AlN陶瓷基板11上，并且用于驱动发光器件的集成电路14直接安装在基板11上。发光器件13是近似长方体，并且用于驱动发光器件的集成电路14的形状也是近似长方体。作为用于安装发光装置13的间隔物12，使用金刚石芯片。在这种电路中，可以缩短将发光器件13连接到用于驱动发光器件的集成电路14的接合线15的有效长度。; 用途：缩短键合线，同时通过在发光器件和基板之间安装由导热性优异的材料构成的间隔物的方法来提高发光器件的冷却效率而发光装置的连接端子位于与用于驱动发光装置的集成电路的连接端子相同的高度。组成：发光二极管13通过金刚石制成的垫片12安装在AlN陶瓷基板11上，并且用于驱动发光器件的集成电路14直接安装在基板11上。发光器件13是近似长方体，并且用于驱动发光器件的集成电路14的形状也是近似长方体。作为用于安装发光装置13的间隔物12，使用金刚石芯片。在这种电路中，可以缩短将发光器件13连接到用于驱动发光器件的集成电路14的接合线15的有效长度。; 用途：缩短键合线，同时通过在发光器件和基板之间安装由导热性优异的材料构成的间隔物的方法来提高发光器件的冷却效率而发光装置的连接端子位于与用于驱动发光装置的集成电路的连接端子相同的高度。组成：发光二极管13通过金刚石制成的垫片12安装在AlN陶瓷基板11上，并且用于驱动发光器件的集成电路14直接安装在基板11上。发光器件13是近似长方体，并且用于驱动发光器件的集成电路14的形状也是近似长方体。作为用于安装发光装置13的间隔物12，使用金刚石芯片。在这种电路中，可以缩短将发光器件13连接到用于驱动发光器件的集成电路14的接合线15的有效长度。
申请日期	1986-12-05 ; 1986-12-05 ; 1986-12-05 ; 1986-12-05
专利号	JP2519698B2 ; JP2519698B2 ; JP2519698B2 ; JP2519698B2
专利状态	失效 ; 失效 ; 失效 ; 失效
申请号	JP1986289902 ; JP1986289902 ; JP1986289902 ; JP1986289902
公开（公告）号	JP2519698B2 ; JP2519698B2 ; JP2519698B2 ; JP2519698B2
IPC 分类号	H01L \| H01S \| H01S5/00 \| H01L33/64 \| H01L33/00 ; H01L \| H01S \| H01S5/00 \| H01L33/64 \| H01L33/00 ; H01L \| H01S \| H01S5/00 \| H01L33/64 \| H01L33/00 ; H01L \| H01S \| H01S5/00 \| H01L33/64 \| H01L33/00
专利代理人	佐野健一郎 (外2名) ; 佐野健一郎 (外2名) ; 佐野健一郎 (外2名) ; 佐野健一郎 (外2名)
代理机构	- ; - ; - ; -
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/34813
专题	半导体激光器专利数据库
作者单位	住友電気工業株式会社
推荐引用方式 GB/T 7714	西口勝規,関口剛. 半導体装置, 半導体装置, 半導体装置, 半導体装置. JP2519698B2, JP2519698B2, JP2519698B2, JP2519698B2[P]. 1996-05-17, 1996-05-17, 1996-05-17, 1996-05-17.

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