Coherent radiation generator

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	Coherent radiation generator
其他题名	Coherent radiation generator
	-
	1967-08-23
专利权人	RADIO CORPORATION OF AMERICA
公开日期	1967-08-23
授权国家	英国
专利类型	授权发明
摘要	1,080,697. Semi-conductor laser devices. RADIO CORPORATION OF AMERICA. Oct. 9, 1964 [Oct. 30, 1963], No. 41428/64. Headings H1C and H1K. A device for producing coherent radiation comprises a body of semi-conductor material and a pair of electrodes to which an electric field is applied to produce the coherent radiation by recombination of ionized particles of the body, at least one of the electrodes being transparent to the coherent radiation to enable it to be transmitted out of the body. A semiconductor crystal 23 has a centre portion 25 of pure indium antimonide and two end portions 27, 29 of N-type indium antimonide functioning as electrodes to which an electric field is applied via metal rings 34, 35. In operation the body 23 is cooled by cryostat 41 until the centre portion is completely deionized and an electric field from battery 37 and signal generator 38 is then applied across the electrodes 27, 29 to form ionization of the atoms of the centre body 25, the recombination of the charge carriers producing stimulated emission. An optical resonator for the stimulated emission is formed by the plane parallel surfaces of the regions 27, 29 and a pair of plane parallel mirrors 31, 33 placed adjacent the end surfaces of the body 23. The mirrors may be spaced from the end surfaces. The output from the device is taken through end portion 27 and mirror 3 The circuit 36 may apply a constant bias voltage and a superimposed alternating, or pulsed or intermittent non - cyclical voltage. In the arrangement of Fig. 2 (not shown) the left-hand electrode is omitted and the centre and right portions are constituted of different semiconductor materials but have either a common cation or a common anion. Suitable pairs of materials are GaAs and GaP or InSb and GaSb or InSb and InAs.
其他摘要	1080697。半导体激光器件。美国无线电公司。 1964年10月9日[10月9日] [1963]，第41428/64号。标题H1C和H1K。一种用于产生相干辐射的装置，包括半导体材料体和一对电极，电场施加电场以通过体的电离粒子的复合产生相干辐射，至少一个电极对于透明的电极是透明的。相干辐射使其能够传播出体外。半导体晶体23具有纯铟锑的中心部分25和N型锑化铟的两个末端部分27,29，其用作通过金属环34,35施加电场的电极。在操作中，主体23被冷却通过低温恒温器41直到中心部分被完全去离子化，然后来自电池37和信号发生器38的电场施加在电极27,29上以形成中心体25的原子的电离，重新组合电荷载体产生受激发射。用于受激发射的光学谐振器由区域27,29的平面平行表面和邻近主体23的端表面放置的一对平面平行反射镜31,33形成。反射镜可以与端表面隔开。来自器件的输出通过端部27和反射镜3电路36可以施加恒定的偏置电压和叠加的交替或脉冲或间歇的非循环电压。在图2的布置中（未示出），省略了左手电极，并且中心和右侧部分由不同的半导体材料构成，但是具有共同的阳离子或共同的阴离子。合适的材料对是GaAs和GaP或InSb和GaSb或InSb和InAs。
申请日期	1964-10-09
专利号	GB1080697A
专利状态	失效
申请号	GB1964041428
公开（公告）号	GB1080697A
IPC 分类号	H01S5/30 \| H01S5/00 \| H01L33/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/34655
专题	半导体激光器专利数据库
作者单位	RADIO CORPORATION OF AMERICA
推荐引用方式 GB/T 7714	-. Coherent radiation generator. GB1080697A[P]. 1967-08-23.

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