Semiconductor crystalline device manufacture

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	Semiconductor crystalline device manufacture
其他题名	Semiconductor crystalline device manufacture
	-
	1965-06-16
专利权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
公开日期	1965-06-16
授权国家	英国
专利类型	授权发明
摘要	995,12 Lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Feb. 5, 1964 [Feb. 20, 1963], No. 4815/64. Heading H3B. [Also in Division H1] A method of making a plurality of lasers includes the steps of forming a bar of crystalline semi - conductor material having two parallel cleaved faces and dividing the bar into a plurality of pieces along directions transverse to the cleaved faces. The method is used to produce injection lasers, the process being illustrated in Fig. 4c. A crystal of N-type gallium arsenide doped with selenium is grown, for example by pulling from a melt in the 100 or 111 direction which favours crystalline perfection, and is then cut into wafers. Zinc is diffused into one surface of the wafer to produce a junction and the wafer is then cleaved into bars, the cleaved faces being spaced the desired Fabry-Perot interference distance apart. The bar is then subdivided by sawing, etching or cleaving. A laser formed by this method is shown in Fig. 7, the saw-cuts 41, 42 restricting the active area of the device while leaving the lower part 2 as a heat dissipating surface. Leads 9 and 11 are joined to the faces 8 and 9 of the device and the cleaved faces may be silvered to increase their reflectivity. The edge portions 44 of the device may be removed or may be used for signal input purposes. The diffusion of zinc into the wafer can also be performed after cleaving the wafer into bars, and specially shaped junctions can be formed by masking the surface of the wafer or bar during the diffusion. Alternatively the junction can be formed during the growth of the crystal. A plurality of interacting devices can be formed in a single element by extending the bottom of slots 41 and 42 (Fig. 7) parallel to the major faces of the wafer to undercut the edges of the slots which are then removed by cleaving to produce parallel faces. The whole element is also divided from the bar by cleaving.
其他摘要	995121。激光器。国际商业机器公司。 1964年2月5日[2月20,1963]，第4815/64号。标题H3B。 [也在分区H1]制造多个激光器的方法包括以下步骤：形成具有两个平行的解理面的晶体半导体材料条，并沿横向于解理面的方向将条分成多个片。该方法用于制造注入激光器，该过程如图4c所示。生长掺杂有硒的N型砷化镓晶体，例如通过从100或111方向的熔体中拉出有利于晶体完美的晶体，然后切割成晶片。锌扩散到晶片的一个表面中以产生结，然后晶片被切割成条，切割面间隔所需的法布里 - 珀罗干涉距离。然后通过锯切，蚀刻或切割将杆细分。用这种方法形成的激光器如图7所示，锯切41,42限制装置的有效区域，同时使下部2作为散热表面。引线9和11连接到装置的面8和9，并且切割面可以镀银以增加它们的反射率。可以移除设备的边缘部分44，或者可以将其用于信号输入目的。在将晶片切割成条形之后，也可以将锌扩散到晶片中，并且可以通过在扩散期间掩蔽晶片或条的表面来形成特殊形状的结。或者，可以在晶体生长期间形成结。通过使槽41和42的底部（图7）平行于晶片的主面延伸以切割槽的边缘，然后通过切割将其移除以产生平行，可以在单个元件中形成多个相互作用的装置。面对。整个元素也从吧台分开切割。
申请日期	1964-02-05
专利号	GB995121A
专利状态	失效
申请号	GB1964004815
公开（公告）号	GB995121A
IPC 分类号	H01S5/32 \| H01L21/78 \| H01L21/70 \| H01S5/22 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/34649
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	-. Semiconductor crystalline device manufacture. GB995121A[P]. 1965-06-16.

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