Apparatus for semiconductor device fabrication diagnosis and prognosis

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	Apparatus for semiconductor device fabrication diagnosis and prognosis
其他题名	Apparatus for semiconductor device fabrication diagnosis and prognosis
	MOSLEHI, MEHRDAD M.
	1998-02-17
专利权人	TEXAS INSTRUMENTS INCORPORATED
公开日期	1998-02-17
授权国家	美国
专利类型	授权发明
摘要	A sensor (210) for diagnosis and prognosis of semiconductor device fabrication processes measures specular, scattered, and total surface reflectances and transmittances of semiconductor wafers (124). The sensor (210) includes a sensor arm (212) and an opto-electronic control box (214), for directing coherent electromagnetic or optical energy in the direction of semiconductor wafer (124). Opto-electronic control box (214) includes circuitry for measuring the amounts of laser powers coherently reflected from and transmitted through the semiconductor wafer (124) surface and the amounts of electromagnetic powers scatter reflected from and transmitted through the semiconductor wafer (124) surface. Specular, scattered, and total reflectance and transmittance as well as surface roughness values for semiconductor wafer (124) are determined based on measurements of coherent and scatter reflected and transmitted laser powers. The sensor (210) can also provide a go/no-go test of semiconductor fabrication process quality. A process control computer associates with the sensor (210) to respond to spectral reflectance and transmittance measurements yielding surface roughness and thickness measurements as well as diagnosis/prognosis analysis results and control signals.
其他摘要	用于半导体器件制造工艺的诊断和预测的传感器（210）测量半导体晶片（124）的镜面反射，散射和总表面反射率和透射率。传感器（210）包括传感器臂（212）和光电控制盒（214），用于在半导体晶片（124）的方向上引导相干电磁或光能。光电控制盒（214）包括用于测量从半导体晶片（124）表面相干地反射和透射的激光功率的量的电路，以及从半导体晶片（124）表面反射和透射通过半导体晶片（124）表面散射的电磁功率的量。半导体晶片（124）的镜面反射，散射和总反射率以及透射率以及表面粗糙度值是基于相干和散射反射和透射激光功率的测量来确定的。传感器（210）还可以提供半导体制造工艺质量的合格/不合格测试。过程控制计算机与传感器（210）相关联以响应光谱反射率和透射率测量，从而产生表面粗糙度和厚度测量值以及诊断/预测分析结果和控制信号。
申请日期	1996-06-05
专利号	US5719495
专利状态	失效
申请号	US08/658435
公开（公告）号	US5719495
IPC 分类号	G01B11/30 \| G01B11/06 \| G03F7/20 \| H01L21/66 \| H01L21/00 \| H01L21/68 \| G01R31/02
专利代理人	-
代理机构	VALETTI, MARK A. BRADY,III, WADE JAMES DONALDSON, RICHARD L.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/34449
专题	半导体激光器专利数据库
作者单位	TEXAS INSTRUMENTS INCORPORATED
推荐引用方式 GB/T 7714	MOSLEHI, MEHRDAD M.. Apparatus for semiconductor device fabrication diagnosis and prognosis. US5719495[P]. 1998-02-17.

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