III-V group compound devices with improved efficiency and droop rate

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	III-V group compound devices with improved efficiency and droop rate
其他题名	III-V group compound devices with improved efficiency and droop rate
	LI, ZHEN-YU; LIN, HON-WAY; LIN, CHUNG-PAO; HSIA, HSING-KUO; KUO, HAO-CHUNG
	2015-08-04
专利权人	EPISTAR CORPORATION
公开日期	2015-08-04
授权国家	美国
专利类型	授权发明
摘要	The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.
其他摘要	本公开涉及一种照明设备。该照明装置包括n掺杂半导体化合物层，与n掺杂半导体化合物层间隔开的p掺杂半导体化合物层，以及设置在第一半导体化合物层和第二半导体化合物层之间的多量子阱（MQW）半导体化合物层。MQW包括多个交替的第一和第二层。MQW的第一层具有基本均匀的厚度。第二层相对于与p掺杂半导体化合物层的距离具有渐变厚度。与p掺杂半导体化合物层最邻近的第二层的子集掺杂有p型掺杂剂。掺杂的第二层具有渐变的掺杂浓度水平，其相对于与p掺杂的半导体层的距离而变化。
申请日期	2012-09-14
专利号	US9099593
专利状态	授权
申请号	US13/616299
公开（公告）号	US9099593
IPC 分类号	H01L33/06 \| B82Y20/00 \| F21V29/74 \| H01S5/343 \| H01S5/00 \| H01L21/02 \| H01S5/34 \| F21V7/22 \| F21V3/04 \| F21S6/00 \| F21K99/00 \| H01L33/32 \| F21Y101/02
专利代理人	-
代理机构	MUNCY, GEISSLER, OLDS & LOWE, P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/34138
专题	半导体激光器专利数据库
作者单位	EPISTAR CORPORATION
推荐引用方式 GB/T 7714	LI, ZHEN-YU,LIN, HON-WAY,LIN, CHUNG-PAO,et al. III-V group compound devices with improved efficiency and droop rate. US9099593[P]. 2015-08-04.

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