Xi'an Institute of Optics and Precision Mechanics,CAS
Thin film and substrate-removed group III-nitride based devices and method | |
其他题名 | Thin film and substrate-removed group III-nitride based devices and method |
BATRES, MAX; YANG, ZHIHONG; WUNDERER, THOMAS | |
2019-04-02 | |
专利权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
公开日期 | 2019-04-02 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 108/cm2. |
其他摘要 | 一种减薄块状氮化铝基板的方法包括在基板的第一侧上提供具有至少一个外延生长的III族氮化物层的块状氮化铝(AlN)基板,将具有高pH的浆料施加到第二侧在与第一侧相对的基板上,使用浆料对基板的第二侧进行化学机械抛光以去除至少一部分基板,从而形成厚度小于50微米的薄层,并将外延层接合到非天然底物。器件在外延III族氮化物材料层中具有至少一个有源区,外延III族氮化物层的缺陷密度小于或等于10 8 / cm 2 。 |
申请日期 | 2016-11-29 |
专利号 | US10249786 |
专利状态 | 授权 |
申请号 | US15/363050 |
公开(公告)号 | US10249786 |
IPC 分类号 | H01L33/00 | H01L33/32 | H01L33/02 | H01S5/183 | H01S5/323 | H01L29/32 | H01L21/02 | H01L29/20 | H01L21/78 | H01L21/306 |
专利代理人 | - |
代理机构 | MILLER NASH GRAHAM & DUNN LLP |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/32326 |
专题 | 半导体激光器专利数据库 |
作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
推荐引用方式 GB/T 7714 | BATRES, MAX,YANG, ZHIHONG,WUNDERER, THOMAS. Thin film and substrate-removed group III-nitride based devices and method. US10249786[P]. 2019-04-02. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US10249786.PDF(634KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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