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Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices
Guo, Chunyan1,2,3; Jiang, Zhi3,4; Jiang, Dongwei3,4; Wang, Guowei3,4; Xu, Yingqiang3,4; Wang, Tao1; Tian, Jinshou1,5; Wu, Zhaoxin2,5; Niu, Zhichuan3,4
Department精密物理量测量实验室
2019-03
Source PublicationOPTICAL AND QUANTUM ELECTRONICS
ISSN0306-8919;1572-817X
Volume51Issue:3
Contribution Rank1
Abstract

The surface passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices(T2SLs) photodetectors employing diverse voltage and current conditions of sulfide treatment passivation was presented. The superlattices were grown on GaSb substrate by molecular beam epitaxy technology. The circle pixel devices in the diameter of 200m with 5m at mid-infrared and 14m at long-infrared 100% cutoff wavelength were fabricated. Compared to only SiO2 encapsulation passivation and unpassivated detectors, the dark current density, which takes into account surface leakage current, was reduced by approximately three orders of magnitude and the R0A-product was six times higher by sulfide treatment. Besides, detectors passivated through 22V 15mA sulfur treated, the responsivity of was 0.95A/W and QE was 0.44 at 2.6m. As for the wavelength of 5.3m, the responsivity and QE were 1.95 A/W and 0.45 severally.

KeywordDual-color infrared detectors InAs GaSb superlattices Molecular beam epitaxy Sulfide treatment passivation
DOI10.1007/s11082-019-1779-y
Indexed BySCI ; EI
Language英语
WOS IDWOS:000460035600006
PublisherSPRINGER
EI Accession Number20191006587553
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/31209
Collection精密物理量测量实验室
Corresponding AuthorNiu, Zhichuan
Affiliation1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China
2.Chinese Acad Sci, Key Lab Photon Technol Informat, Sch Elect & Informat Engn, Key Lab Phys Elect & Devices,Minist Educ, Xian 710119, Shaanxi, Peoples R China
3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
4.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China
5.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
Recommended Citation
GB/T 7714
Guo, Chunyan,Jiang, Zhi,Jiang, Dongwei,et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. OPTICAL AND QUANTUM ELECTRONICS,2019,51(3).
APA Guo, Chunyan.,Jiang, Zhi.,Jiang, Dongwei.,Wang, Guowei.,Xu, Yingqiang.,...&Niu, Zhichuan.(2019).Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices.OPTICAL AND QUANTUM ELECTRONICS,51(3).
MLA Guo, Chunyan,et al."Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices".OPTICAL AND QUANTUM ELECTRONICS 51.3(2019).
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