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High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection
Alternative Title高分辨紫外电子轰击互补金属氧化物半导体器件的实验研究
Liu Hu-Lin; Wang Xing; Tian Jin-Shou; Sai Xiao-Feng; Wei Yong-Lin; Wen Wen-Long; Wang Jun-Feng; Xu Xiang-Yan; Wang Chao; Lu Yu; He Kai; Chen Ping; Xin Li-Wei
Department精密物理量测量实验室
2018-01-05
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume67Issue:1
Contribution Rank1
Abstract

High resolution and high sensitive low light level imaging sensors are crucial in many applications such as astronomical observation, high energy physics, night vision and remote sensing. The electron bombarded complementary metal oxide semiconductor (EBCMOS) sensor is a novel imager in which very high gain can be produced by hitting the semiconductor with high voltage without any noise generation. In addition, it can process high-definition image with kHz frame rate. These advatages make the EBCMOS an ideal device for ultrafast single-photon imgaing. In this article, we present an EBCMOS sensor working in the ultraviolet range by combing the technology of vacuum photocathode and back illuminated CMOS together. This EBCMOS sensor can realize very high resolution in 40 mlx light illumination environment. The achieved spatial resolution is 25 lp/mm (line paris per millimeter) when the electric field intensity is 5000 V/mm. The liner relation between electric field intensity and the resolution indicates that much better perofromance can be achieved if the electric field intensity increases to a much higher value. The EBCMOS sensor developed in this paper can be directly applied to UV weak light detection, moreover it will provide a good reference for further developing the visible and near infrared sensitive EBCMOS sensors.

 

KeywordComplementary Metal Oxide Semiconductor Electron Bombareded Gain Low Light Level Imaging Uv Detection
Subject AreaPhysics, Multidisciplinary
DOI10.7498/aps.67.20171729
Indexed BySCI ; EI ; CSCD
Language中文
WOS IDWOS:000425271100016
EI Accession Number20181505001310
Citation statistics
Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/30758
Collection精密物理量测量实验室
AffiliationChinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China
Recommended Citation
GB/T 7714
Liu Hu-Lin,Wang Xing,Tian Jin-Shou,et al. High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection[J]. ACTA PHYSICA SINICA,2018,67(1).
APA Liu Hu-Lin.,Wang Xing.,Tian Jin-Shou.,Sai Xiao-Feng.,Wei Yong-Lin.,...&Xin Li-Wei.(2018).High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection.ACTA PHYSICA SINICA,67(1).
MLA Liu Hu-Lin,et al."High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection".ACTA PHYSICA SINICA 67.1(2018).
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