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Efficiency analysis of 808 nm laser diode array under different operating temperatures
其他题名808nm半导体激光芯片电光转换效率的温度特性机理研究
Song Yun-Fei1,2; Wang Zhen-Fu1; Li Te1; Yang Guo-Wen1,3
作者部门瞬态光学技术国家重点实验室
2017-05-20
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号66期号:10
产权排序1
摘要

The 808 nm high-efficiency laser diodes have many advantages, such as high output power, high reliabilities, compact sizes, which are widely used in many areas, such as industry, communication, science, medicine and biology. In order to improve the power conversion efficiencies of 808 nm laser diodes, the following requirements must be considered, such as loss of joule heating, loss by the carrier leakage, spontaneous radiation loss below the threshold current, loss by interface voltage defect, internal losses including free-carrier absorption loss and scattering loss. These losses above are closely related to the operating temperature of laser diode. In this paper, power conversion efficiency analysis is demonstrated from the aspects of the output power, threshold current, slope efficiency, voltage, and series resistance at different temperatures.. This is the first time that the detailed study has been carried out under various temperatures (up to the lowest temperature of -40 degrees C). And the detailed study above can be of benefit to designing the wafer epitaxial structure.

文章类型Article
关键词Laser Chip Power Conversion Efficiency Temperature
WOS标题词Science & Technology ; Physical Sciences
DOI10.7498/aps.66.104202
收录类别SCI ; EI ; CSCD
关键词[WOS]POWER ; CONVERSION
语种中文
WOS研究方向Physics
项目资助者National Natural Science Foundation of China(61504167) ; "100 Talents Project" of Chinese Academy of Sciences, China(Y429941233)
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000403088000013
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/29177
专题瞬态光学研究室
作者单位1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Xian Lumcore Optoelect Technol Co Ltd, Xian 710077, Peoples R China
推荐引用方式
GB/T 7714
Song Yun-Fei,Wang Zhen-Fu,Li Te,et al. Efficiency analysis of 808 nm laser diode array under different operating temperatures[J]. ACTA PHYSICA SINICA,2017,66(10).
APA Song Yun-Fei,Wang Zhen-Fu,Li Te,&Yang Guo-Wen.(2017).Efficiency analysis of 808 nm laser diode array under different operating temperatures.ACTA PHYSICA SINICA,66(10).
MLA Song Yun-Fei,et al."Efficiency analysis of 808 nm laser diode array under different operating temperatures".ACTA PHYSICA SINICA 66.10(2017).
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