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Growth of SiC nanowires by low pressure chemical vapor infiltration using different catalysts
Men, Jing1; Liu, Yongsheng1; Luo, Rong1,2; Li, Weinan2; Cheng, Laifei1; Zhang, Litong1; Liu, Yongsheng (yongshengliu@nwpu.edu.cn)
作者部门瞬态光学技术国家重点实验室
2016-11-01
发表期刊JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN0955-2219
卷号36期号:15页码:3615-3625
产权排序2
摘要

SiC nanowires were synthesized by LPCVI using different catalysts, and the influences of input gas ratio (alpha) and catalysts were investigated. The average diameter firstly decreased and then increased with increasing alpha. Under Ni-based catalysis, SiC nanowires were long and thin, and increased with increasing concentration; under Fe-based catalysis, they were short and thick, and the influence of concentration could be neglected. The growth of SiC nanowires was controlled by vapor-liquid-solid (VLS) growth mechanism and the liquid-solid interface between nanowire and metal droplet was the growth plane. At same concentration, the diameter grown under Ni-based catalyst decreased with decreasing diameter of catalyst droplet, while under Fe-based catalyst, the diameters were not affected by catalyst droplet because of the high concentration. SiC nanowires were synthesized in 2D C/SiC composites and could enhance the mechanical properties effectively because of energy consuming from the fracture, pulled up and debond of SiC nanowires. (C) 2016 Elsevier Ltd. All rights reserved.

文章类型Article
关键词Sic Nanowires Vapor-liquid-solid (Vls) Low Pressure Chemical Vapor Infiltration (Lpcvi) 2d C/sic Composites
WOS标题词Science & Technology ; Technology
DOI10.1016/j.jeurceramsoc.2016.04.004
收录类别SCI ; EI ; ISTP
关键词[WOS]SILICON-CARBIDE WHISKERS ; RAMAN-SCATTERING ; CARBON NANOTUBES ; STACKING-FAULTS ; CVI PROCESS ; COMPOSITES ; MECHANISM ; FE ; MICROSTRUCTURE ; NANOPARTICLES
语种英语
WOS研究方向Materials Science
WOS类目Materials Science, Ceramics
WOS记录号WOS:000381951200009
引用统计
被引频次:31[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/28290
专题瞬态光学研究室
通讯作者Liu, Yongsheng (yongshengliu@nwpu.edu.cn)
作者单位1.Northwestern Polytech Univ, Sci & Technol Thermostruct Composite Mat Lab, Xian 710072, Shaanxi, Peoples R China
2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Shaanxi, Peoples R China
推荐引用方式
GB/T 7714
Men, Jing,Liu, Yongsheng,Luo, Rong,et al. Growth of SiC nanowires by low pressure chemical vapor infiltration using different catalysts[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2016,36(15):3615-3625.
APA Men, Jing.,Liu, Yongsheng.,Luo, Rong.,Li, Weinan.,Cheng, Laifei.,...&Liu, Yongsheng .(2016).Growth of SiC nanowires by low pressure chemical vapor infiltration using different catalysts.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,36(15),3615-3625.
MLA Men, Jing,et al."Growth of SiC nanowires by low pressure chemical vapor infiltration using different catalysts".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 36.15(2016):3615-3625.
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