| Investigation of high-power sub-nanosecond GaAs photoconductive switches | |
| 其他题名 | 高功率亚纳秒GaAs光电导开关的研究 |
Shi, W; Zhao, W ; Zhang, XB; Li, EL
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| 2002-04-01 | |
| 发表期刊 | ACTA PHYSICA SINICA
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| 卷号 | 51期号:4页码:867-872 |
| 摘要 | Experiments of an all-solid-state insulated lateral semi-insulating GaAs photoconductive semiconductor switch(PCSS) triggered by nano-second and pico-second laser pulses are reported. Both linear and nonlinear modes of the 3 mm-gap and 8 mm-gap GaAs PCSS was observed when triggered by a nano-second laser. The current could be as high as 560A. The same device also revealed good temporal characteristics when trigger with a pico-second laser. The rising time of the PCSS response is less than 200ps, which is limited by the coaxial cable. |
| 文章类型 | Article |
| 关键词 | Photoconductive Semiconductor Switches Lock-on Effect High Power Ultra-fast Electrical Pulse |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 收录类别 | SCI ; EI |
| 语种 | 中文 |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| WOS记录号 | WOS:000174952500031 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/25450 |
| 专题 | 瞬态光学研究室 |
| 作者单位 | 1.Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China 2.Chinese Acad Sci, State Key Lab Transient Opt & Technol, Xian Inst Opt & Fine Mech, Xian 710068, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, W,Zhao, W,Zhang, XB,et al. Investigation of high-power sub-nanosecond GaAs photoconductive switches[J]. ACTA PHYSICA SINICA,2002,51(4):867-872. |
| APA | Shi, W,Zhao, W,Zhang, XB,&Li, EL.(2002).Investigation of high-power sub-nanosecond GaAs photoconductive switches.ACTA PHYSICA SINICA,51(4),867-872. |
| MLA | Shi, W,et al."Investigation of high-power sub-nanosecond GaAs photoconductive switches".ACTA PHYSICA SINICA 51.4(2002):867-872. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| 高功率亚纳秒GaAs光电导开关的研究.p（227KB） | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 请求全文 | |
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