| Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy | |
| Zhang, Xin-An1,2; Zhang, Jing-Wen1; Zhang, Wei-Feng2; Wang, Dong1; Bi, Zhen1; Bian, Xu-Ming1; Hou, Xun1,2,3,4 | |
| 作者部门 | 瞬态光学国家重点实验室 |
| 2008-03-31 | |
| 发表期刊 | THIN SOLID FILMS
 |
| ISSN | 0040-6090 |
| 卷号 | 516期号:10页码:3305-3308 |
| 摘要 | The thin film transistors (TFTs) based on nitrogen doped zinc oxide (ZnO) were investigated by laser molecular beam epitaxy. The increase of ZnO films' resistivity by nitrogen doping was found and applied in enhancement mode ZnO-TFTs. The ZnO-TFTs with a conventional bottom-gate structure were fabricated on thermally oxidized p-type silicon substrate. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 10(4). The threshold voltage is 5.15 V. The channel mobility on the order of 2.66 cm(2) V-1 s(-1) has been determined. (c) 2007 Elsevier B.V. All rights reserved. |
| 文章类型 | Article |
| 关键词 | L-mbe Zinc Oxide Thin Film Transistor Doping |
| 学科领域 | 数理科学和化学 |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| DOI | 10.1016/j.tsf.2007.09.034 |
| 收录类别 | SCI ; EI |
| 关键词[WOS] | LOW-TEMPERATURE |
| 语种 | 英语 |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| WOS记录号 | WOS:000254634600079 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/11009 |
| 专题 | 瞬态光学研究室 |
| 作者单位 | 1.Xian Jiaotong Univ, Key Lab Photon Technol Informat, Xian 710049, Peoples R China 2.Henan Univ, Sch Phys & Elect, Kaifeng 475001, Peoples R China 3.Xian Jiaotong Univ, Key Lab Phys Elect & Dev Under Minist Educ, Xian 710049, Peoples R China 4.Chinese Acad Sci, Xian Inst Opt & Prec Mech, State Key Lab Transient Opt & Photon, Xian 710068, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Xin-An,Zhang, Jing-Wen,Zhang, Wei-Feng,et al. Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy[J]. THIN SOLID FILMS,2008,516(10):3305-3308. |
| APA | Zhang, Xin-An.,Zhang, Jing-Wen.,Zhang, Wei-Feng.,Wang, Dong.,Bi, Zhen.,...&Hou, Xun.(2008).Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy.THIN SOLID FILMS,516(10),3305-3308. |
| MLA | Zhang, Xin-An,et al."Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy".THIN SOLID FILMS 516.10(2008):3305-3308. |
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| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| Enhancement-mode thi（539KB） | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 请求全文 | |
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